研究課題/領域番号 |
17J10578
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研究機関 | 桐蔭横浜大学 |
研究代表者 |
KULKARNI ASHISH 桐蔭横浜大学, 工学研究科, 特別研究員(DC2)
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研究期間 (年度) |
2017-04-26 – 2019-03-31
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キーワード | Bismuth iodide / Lead-free / Solar cells / High stable |
研究実績の概要 |
Toxicity concern of lead in perovskite solar cells led to the search of non-toxic lead-free material. In this context, we carried out investigation on eco-friendly bismuth iodide (BiI3) and silver-bismuth halide (SBH) material for solar cells. In case of BiI3, effect of different annealing methods and temperatures on BiI3 film morphology was investigated. The BiI3 device processed at 150 deg. with PR-VA treatment showed efficiency of 0.5%, owing to increase in grain size and uniform morphology of BiI3 film. For SBH one, effect of different precursor solvents and weight percent of the precursor materials was investigated. As found in the, SBH based device obtained from 20 wt.% and DMSO solvent showed efficiency of 2% with high stability due to uniform morphology and interfacial connection
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現在までの達成度 (区分) |
現在までの達成度 (区分)
1: 当初の計画以上に進展している
理由
We have focused on two different kinds of light absorbing materials based on perovskite and non-perovskite one (both based on bismuth). We employed non-perovskite material (BiI3) because of the absence of organic part which makes it much stable against humidity and heat stress. The results were presented in international conferences and I received Award for the Encouragement of Research by Material Research Society of Japan and also I got best poster prize for presenting my research work on silver bismuth halide based devices for lead-free perovskite solar cells. Moreover, I could publish my article on bismuth iodide solar cells (with peer review process) in ACS Applied Material and Interfaces.
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今後の研究の推進方策 |
This year, I would like to focus my research plan on enhancing the efficiency of silver-bismuth halide (SBH) materials. Moreover, studies will also be focused on the search for more suitable solvent (for example: mixture of DMF:DMSO, DMSO:gammabutyrolactone, DMSO:NMP etc), suitable hole transporting materials (HTL) based on polymer and inorganic (NiOx, CuSCNe etc) and interfacial modification with electron donor containing ligands for SBH based devices aiming to improve the efficiency.
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