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[雑誌論文] Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy," Journal of Vacuum Science & Technology A2008
著者名/発表者名
N. URUSHIHARA, S. IIDA, N. SANADA, M. SUZUKI, D.F. PAUL, S. BRYAN, Y. NAKAJIMA, T. HANAJIRI, K. KAKUSHIMA, P. AHMET, K. TSUTSUI, and H. IWAI
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雑誌名
Vacuum, Surfaces, and Films 26
ページ: 668-672
査読あり
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[備考] T. YAMADA, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T.TOYABE and T. SUGANO, "Improvement of performance of DSOI MOSFETs by heavily doping between local BOX regions,"6th Int. Symp. On Bioscience and Nanotechnology p.49(November 7 2008) Tokyo.(審査なし)
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[備考] S. ABE, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T.TOYABE and T. SUGANO, "Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers,"6th Int. Symp. on Bioscience and Nanotechnology p.48 (November 7 2008) Tokyo. (審査なし)
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[備考] T. TODA, Y. NAKAJIMA, T. HANAJIRI and T. SUGANO, "Clarification of origins of high-density trap states in SIMOX wafers,"6th Int. Symp. on Bioscience and Nanotechnology p.47(November 7 2008) Tokyo. (審査なし)
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[備考] T. HANAJIRI, Y. NAKAJIMA, T. TOYABE, A. INOUE, T. SUGANO and T. MAEKAWA,"Nanoelectronics and its application to Bio-Nano Devices,"6th Int. Symp. on Bioscience and Nanotechnology p.6 (November 7 2008) Tokyo. (審査なし)
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[備考] T. TODA, T. YAMASHITA, Y. NAKAJIMA, T. HANAJIRI and T.TOYABE, "Characterization of mobility and stress in strained MOSFETs",5th Int. Symp. on Bioscience and Nanotechnology p.74(December 5 2007) Kawagoe. (審査なし)
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[備考] T. YAMADA, Y .MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI and T.TOYABE,"Development of a three-dimensional general-purpose device simulator for advanced electron devices",5th Int. Symp. on Bioscience and Nanotechnology p.73(December 5 2007) Kawagoe.(審査なし)
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[備考] Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, S. KOMUROandT.TOYABE, "Non-destructive characterization of surface recombination velocity at SOI/BOX interfaces by PL decays",5th Int. Symp. on Bioscience and Nanotechnology p.69(December 5 2007) Kawagoe(審査なし)
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[備考] Y. NAKAJIMA,T. HANAJIRI and T. SUGANO, "Microscopic structure at SOI/BOX inteeface in SIMOX wafers",5th Int. Symp. on Bioscience and Nanotechnology p.68 (December 5 2007) Kawagoe. (審査なし)
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[備考] T. HANAJIRI, Y. NAKAJIMA, T. TOYABE, A.IOUE, T.SUGANO and T.MAEKAWA, "Nanoelectronics for Bio-Nano devices",5th Int. Symp. on Bioscience and Nanotechnology p.12(December 5 2007) Kawagoe. (審査なし)
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[備考] Y. MIYAZAWA, T. YAMADA, Y. NAKAJIMA, T.HANAJIRI, S.KOMURO and T.TOPYABE, "Estimation of Surface Recombination Velocity at silicon on insulator (SOI)/buried oxide (BOX) interface,"4th Int. Symp. on Bioscience and Nanotechnology p.94 (November 2006) Okinawa.(審査なし)
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[備考] K. ODA, Y. NAKAJIMA, T. HANAJIRI and T.SUGANO, "Characterization of electric characteristics of SOI wafers,"4th Int. Symp. on Bioscience and Nanotechnology p. 92 (November 2006) Okinawa.(審査なし)
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[備考] T. TOYABE, T. HANAJIRI and. NAKAJIMA, "Development of nano/micro electron devices", Brighton University-Toyo University COE Seminor, (September 2006) Brighton,UK.(招待)(審査なし)
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[備考] T. TOYABE, T. HANAJIRI and. NAKAJIMA, "Development of nano/micro electron devices", Brighton University-Toyo University COE Seminor, (September 2006) Brighton,UK.(招待)(審査なし)
