| 研究実績の概要 |
We had analytically estimated how large averaged-random electric field could be generated due to the interface roughness of GaN/AlGaN before. However, since the randomness of interface roughness will trigger the enormous randomly distributed electric field around quantum wells, modeling self-energy based on the averaged-random electric field will unfit to discover the origin of the difficulty of spontaneous emission.
Therefore, we start to develop 3D NEGF (non-equilibrium Green function) carrier transport simulator and polarization-induced interface roughness scattering’s self-energy to prove the impact of random electric field without objection.
Since the time required for the development of the above contents is predicted as quite long, we have parallelly investigated a new waveguide structure that may pull in the realization of the efficient GaN/AlGaN QCL in the near future. We are preparing a patent and a research paper to publish.
|
