| 研究課題/領域番号 |
18K05010
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| 研究機関 | 筑波大学 |
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研究代表者 |
ISLAM MONIRUL 筑波大学, 数理物質系, 助教 (30739719)
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| 研究分担者 |
櫻井 岳暁 筑波大学, 数理物質系, 准教授 (00344870)
池田 茂 甲南大学, 理工学部, 教授 (40312417)
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| 研究期間 (年度) |
2018-04-01 – 2021-03-31
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| キーワード | Bismuth Valadium Oxide / Photo-activities / Optical Properties / Structural Properties / Crystal properties / Electrical properties |
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| 研究実績の概要 |
(1) Undoped BiVO4 and molybdenum (Mo), zirconium (Zr) and titanium (Ti)-doped powder and films were synthesized by solution method. a) Crystal structure of BiVO4, studied by XRD shows small doping (Mo, Zr) until 0.5 mol.% keep monoclinic-structure like undoped-BiVO4. Doping > 0.5 mol.% triggers monoclinic to tetragonal structure. b) Optical Properties studied by Kelvin probe (KP) shows slightly lower band-gap in Mo and Zr doped sample. c)Low-doped BiVO4 (< 0.5 mol %) shows higher oxygen generation (improved photo-catalytic activities) comparing to undoped and high-doped BiVO4.
(2) Growth temperature variation: Photoluminescence (PL) shows improved crystallinity with larger carrier life-time, and better photo-activities for BiVO4 synthesized at higher temperature until 100 deg C. (3) Deposition and characterization of chalcopyrite p-Cu2ZnSn(S,Se)4,p-Cu(In,Ga)Se2 films,and silicon films for Z-scheme photocatalyst with n-BiVO4.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
1: 当初の計画以上に進展している
理由
We have set the target for FY 2018 as to synthesis of Zr doped BiVO4 only and to investigate structural, electrical and optical characterization. However, we have already synthesized Zr, Mo and Ti doped BiVO4 samples. In addition to perform various characterization of the doped samples, we have already performed photocatalytic activities by evaluating oxygen generation through fabrication of electrochemical based photocatalytic system using the doped and undoped BiVO4 materials. In addition we have deposited chalcopyrite p-Cu2ZnSn(S,Se)4, p-Cu(In,Ga)Se2, and also silicon films to fabricate Z-scheme photocatalyst structure with n-BiVO4 film.
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| 今後の研究の推進方策 |
1) Deposition of BiVO4 thin films by evaporation method, specially using sputtering or molecular beam epitaxy. BiVO4 photo-anodes by vacuum system are expected to show superior electrical and optical properties with higher carrier and larger carrier life time.
2) Vacuum deposition of doped BiVO4 films with Zr, Mo and also hafnium (Hf).
3) Crystal, optical and electrical characterization of vacuum deposited BiVO4 films using XRD, PL, TRPL, Raman, Hall method.
4) Electrical properties of BiVO4 using electrochemical analyzer.
5) Understanding photodynamics of doped and undoped BiVO4 films using temperature dependent PL measurement.6) Photocatalytic activities of BiVO4 using electrochemical based system.7) fabrication and characterization of p-CuZnSn(S,Se) for Z-scheme structure with BiVO4 films.
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