| 研究実績の概要 |
During the past two fiscal years, thermal stabilities for hydrogenated diamond Ohmic contacts and MOSFETs have been improved. A long-term annealing process is performed for the Pd/H-diamond Ohmic contact with annealing temperature and time of 400 °C and 8 hours, respectively. A low specific contact resistivity and good thermal stability for the Pd/H-diamond are achieved. On the other hand, good operations for the H-diamond MOSFETs after annealing at 500 ºC are completed. The SiOx films are employed as oxide insulators for the H-diamond MOSFETs. Stable electrical characteristics are confirmed for the annealed SiOx/H-diamond MOSFET after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.
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