| 研究課題/領域番号 |
18K14139
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| 研究機関 | 島根大学 |
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研究代表者 |
Pham Hoang.Anh 島根大学, 学術研究院理工学系, 助教 (60750213)
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| 研究期間 (年度) |
2018-04-01 – 2022-03-31
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| キーワード | Thin film / Aluminum film / Gold film / Laser annealing / Selective growth / Single crystal |
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| 研究実績の概要 |
We aimed to grow single crystal on Au thin film to reduce its electrical resistivity by using a chevron-shaped laser beam scanning (CLBS). The originality of our research was to use a capping layer of SiO2 on top of the Au film to realize the single crystal growth. We found that the single crystal can only be grown when the temperature of the melt was kept high enough, therefore the capping layer of SiO2 is necessary to prevent the melt from evaporation at high temperature. The SiO2 layer also reduced the cooling rate to assist the single crystal growth. When the thickness of SiO2 layer increased from 200nm to 300nm, a wider single crystal stripe can be obtained by CLBS on the 50 nm Au thin film. The approach is also feasible to be used for other metal thin films.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
Without SiO2 capping layer, the Au film was melted by CLBS, but the melt evaporated immediately, regardless the attempt to control the laser power. The SiO2 capping layer suppressed evaporation of the melt, so that single crystal can be grown from the melt. However, further optimization of the capping layer thickness and materials is required for control of the single crystal growth process.
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| 今後の研究の推進方策 |
We are trying optimization of the processing parameters for single-crystal growth on Au thin films and to clarify the mechanism of this process. SiO2 capping layers of 400, 500, and 600 nm thickness will be deposited on the 50 nm Au films to study the effect of capping layer's thickness on the CLBS process. The research goal is to optimize the CLBS process for single crystal growth on Au film and to understand the mechanism of the single crystal growth.
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| 次年度使用額が生じた理由 |
The remain is only 112 yen.
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