| 研究実績の概要 |
We performed our first studies of InAs nanowires flip-chipped onto Niobium resonators fabricated on sapphire substrates. These devices improve our Q-factor with internal Q~400,000 and will thus increase the sensitivity of the readout of states. The flip-chip technique can now be used to study devices on any substrate, significantly simplifying fabrication by separating the resonator processing from the rf-SQUID. In addition, we succeed our first dispersive readout of a HgTe Josephson junction rf-SQUID flip-chipped onto a resonator circuit. A fabrication method is also developed to produce asymmetric SQUID devices with the HgTe junctions using a conventional Ag nanowire junction as a high critical current shunt. Finally, we characterize in DC transport new InAs devices with a full-shell of epitaxial Aluminium, in which flux tuning of the bound state spectrum through the Little Parks effect for an axial magnetic field is predicted to allow topological states for a relatively low magnetic field. The characterization of these devices paves the way for the study in cavities in FY2021.
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