| 研究実績の概要 |
The purpose of this project is to achieve the application of boron nitride coated single-walled carbon nanotubes in FET devices. We have sucessfully fabricated the device using our material. Moreover, We have also obtained high-purity and high-quality boron nitride nanotube film by removing carbon nanotubes in the heterostructure of carbon nanotube and boron nitride nanotube. Boron nitride nanotubes based heteronanotubes served as a promising platform for investigating the optical properties of transition metal dichalcogenide nanotubes, photoluminescence from molybdenum disulfide nanotubes was observed. The heteronanotubes of boron nitride nanotubes with molybdenum disulfide nanotubes have a great potential for the electronic device applications.
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