| 研究実績の概要 |
While the initial project was considering mechanical methods to exfoliate and transfer silicene/h-BN bilayer from the ZrB2 thin film it was grown on, an other approach was found to be more suitable: the exfoliation through a wet process: The ZrB2 thin film is grown on the silicon membrane of silicon on insulator substrate, which can then be exfoliated through the chemical etching of the oxide layer by a solution of hydrofluoride.
An other part of the project was the patterning of the silicene/h-BN bilayer through the patterning by e-beam lithography of the ZrB2 thin film before the formation of the bilayer. The possibility of this process involving the etching of the ZrB2 thin film by a solution of H3PO4, was demonstrated even though its conditions still need to be optimized.
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