| 研究課題/領域番号 |
19K15381
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| 研究機関 | 筑波大学 |
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研究代表者 |
Hashmi Arqum 筑波大学, 計算科学研究センター, 研究員 (90815325)
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| 研究期間 (年度) |
2019-04-01 – 2021-03-31
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| キーワード | Magnetic 2D material / First principles / Spintronics / Spin filtering / Magnetic anisotropy |
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| 研究実績の概要 |
1-Regarding spintonics in Graphene, we investigated the spin dependent transport properties of magnetic tunnel junctions. Gr based junctions display higher transmission spectra indicating low contact resistance irrespective of the electrode material. Both symmetric and non-symmetric junctions exhibit distinctive selection rules due to the incompatibility of wave functions of electrodes on both sides of the interface.
2-In spite of new 2D materials, a key challenge is the generation of 100% spin-polarized current at the Fermi level for practical spintronics applications. In this work, we use first-principles calculations to demonstrate that the monolayer of chromium oxide, Cr2O3 has long-range ferromagnetism with large magnetocrystalline anisotropy energy and high Curie temperature.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
I have calculated the spin polarization in Graphene based junctions.
I have also found a new 2D material Cr2O3 which is a intrinsic half-metal that accomplishes perfect spin-filtering.
Both above mentioned works shows spin polarization, which is the first part of our project but are failed to show the Spin valley coupled Hall Effect.
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| 今後の研究の推進方策 |
Regarding the work as Spin valley Hall Effect, i am investigating the atomic scale blisters due to dislocations or grain boundaries in the graphene lattice. Using First principles calculations i am exploring the various functionalities depending on the local symmetry and size of blisters.
This work shows the positive signs regarding our main focus of Spin valley Hall Effect.
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| 次年度使用額が生じた理由 |
Because the research is not completed yet, 2nd year is most critical so i have to purchase and use most of the money in 2nd year.
I have to buy most of things like buying PC, software, equipments, and publication charge with incurring amount to be used in next fiscal year.
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