| 研究実績の概要 |
We systematically studied the composition dependence of anomalous Nernst effect (ANE) in FexGa4-x system. Our research provides an ideal candidate for application using ANE. Firstly, We find a peak value of 5.4 μV/K in Fe3.09Ga0.91 which is the largest room-temperature value so far observed in polycrystalline magnetic compounds. Moreover, we found this large room-temperature ANE in the polycrystalline Fe3Ga is robust against Fe doping, making this material a promising candidate. Secondly, our work provides an experimental realization of the tuning of the anomalous Nernst effect by the Berry curvature engineering. Our theoretical analysis suggests that the Fe doping increases the exchange splitting effect, thereby tuning Berry curvature near the Fermi energy.
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