| 研究実績の概要 |
Simulation and experiment were done to study the high-aspect ratio (HAR) etching in 3D NAND devices. For the simulation part, molecular dynamics (MD) simulation of ion scattering on silicon and silicon dioxide substrates by Ar, Ne, and Xe were done. The incident ions used were of noble gases to focus on simple physical scattering phenomenon, and remove the effect of chemical reaction. The scattering study was done to understand the effect of atomic scale roughness in HAR etching. The results obtained for the scattering simulation were summarized and presented in an international conference held online. The results were also summarized in a paper that is pending for publication submission.
For the experiment, delays due to the restrictions caused by COVID 19 were encountered. Nonetheless, sufficient progress were made. The experiments were divided into two parts: plasma diagnostic experiment and ion beam experiment. Several diagnostics experiments such as Langmuir probe and optical emission spectroscopy (OES) were done to characterize a pure Ar plasma in a capacitively coupled plasma (CCP) system. For the beam experiments, wafers were obtained from the collaborator and were analyzed by x-ray photoelectron spectroscopy (XPS). All results obtained were summarized and presented to our collaborator during progress report meetings.
Overall, the simulations and the experiments are on track.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
There was a small delay to the experiments due to the COVID 19 restrictions. This resulted for a request to carry-over the remaining budget. Also, the budget for travel expenses to attend conferences were realloted to material expenditures since conferences were either cancelled or held online. Nonetheless, the research progressed sufficiently even with the small delay as we were able to adjust our research schedule. Additionally, we were able to present the results from the simulation of ion scattering in an international conference held online.
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| 今後の研究の推進方策 |
The research implementation plan is to continue the plasma diagnostics experiments, the ion beam experiments, and the molecular dynamics simulation for studying the high-aspect ratio etching process in 3D NAND memory devices. If delays are encountered again, the research plan would be adjusted to focus on the simulation until such a time that the experiments could be continued.
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