| 研究実績の概要 |
In the first year of this project, we fabricated epitaxial antiferromagnetic (AFM) FeRh thin films on MgO(001) substrate with the optimization of deposition conditions. A sharp phase transition from ferromagnetic to AFM was observed with temperature and magnetic field. Room-temperature bulk AFM phase of FeRh was achieved. We further fabricated antiferromagnetic tunnel junction (AFMTJ) stacks with the core structure of FeRh/MgO/CoFe. Interestingly, we found that the sign of magnetoresistance changes with the directions of applied bias voltages, i.e., a bipolar tunneling magnetoresistance (TMR) was achieved. We further found that the bipolar TMR effect originates from the unique density of states of the ferromagnetic FeRh at the interface.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
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理由
We have optimized the deposition condition of antiferromagnetic FeRh thin films and have fabricated antiferromagnetic tunnel junctions with the core structure of FeRh/MgO/CoFe, which follows our research plans. Therefore, the project is progressing rather smoothly.
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| 今後の研究の推進方策 |
In order to accelerate the project, new characterizations and more optimizations for the antiferromagnetic (AFM) materials are strongly required, which is also important for establishing new research aspects. Therefore, we plan to design and engineer new AFM materials and related structures, e.g. colinear AFM RuO2, and noncolinear AFM IrMn, and to start new structural characterizations for optimizing the AFM materials, e.g. XMLD measurements.
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