| 研究実績の概要 |
In this project, we focused on developing antiferromagnetic materials for magnetic tunnel junctions (MTJs). We optimized three kinds of antiferromagnetic materials, i.e., FeRh, Mn3Ir, and RuO2. In a core structure of epitaxial buffer/FeRh/MgO/FeCo/cap, we achieved a tunnel magnetoresistance (TMR) ratio of ~20% at room temperature (RT) with a sign reversal of the TMR with polarity of applied bias voltage, where we found that the interface terminated layer of FeRh played an important role. In the structure of polycrystalline buffer/Mn3Ir/MgO/cap, the TMR ratio of ~3% at RT was observed. We also achieved fully epitaxial Mn3Ir thin films and highly conductive RuO2 colinear antiferromagnetic epitaxial films that will be useful for developing high-quality Mn3Ir/MgO and RuO2/TiO2 based MTJs.
|
