| 研究課題/領域番号 |
20K14720
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| 研究機関 | 京都先端科学大学 |
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研究代表者 |
Tripathi Ravi・Nath 京都先端科学大学, ナガモリアクチュエータ研究所, 助教 (00869745)
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| 研究期間 (年度) |
2020-04-01 – 2024-03-31
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| キーワード | Power device / Paralleling / SiC / GaN |
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| 研究実績の概要 |
The intelligent balancing of the parallel connected power devices is explored considering the wide band gap power devices. Parallel connected SiC devices are controlled using the gate delay and gate compensation control with appropriate resolution that is capable of minimizing the unbalanced current.
Further, a hybrid switch ooncept is proposed and implemented considering a chopper circuit for the improved ruggedness and switching performance of the GaN and SiC switches. A parallel hybrid GaN and SiC switch with intelligent switching control technique using single gate driver solution, is demonstrated with improved system performance.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The two parallel connected SiC devices are explored with intelligent switching control operation , optimized and improved current balancing is successfully achieved with gate delay control and gate voltage control. Incorporating both control methodology , it is capable of achieving dynamic as well as static current sharing among the devices. Especially in case of SiC devices the unbalancing among the devices happen due to threshold voltage. SiC is capable of achieving static current balancing inherently , however this phenomenon works in the change in on resistance correspond to junction temperature. But change in junction temperature ultimately affects the threshold voltage. So in this case both dynamic and static current control is incorporated.
In addition a novel concept based on paralleling devices and intelligent control, a paralleled hybrid switch concept for SiC and GaN is proposed and implemented with validation on the dc-dc converter circuit.
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| 今後の研究の推進方策 |
Future plan is to explore the paralleling of Sic devices for four parallel switches to validate the proposed concept as well as to explore the intelligent balancing possibility for GaN devices as a separate
Project for the high speed switching and intelligent control
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