| 研究課題/領域番号 |
20K14773
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| 研究機関 | 金沢大学 |
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研究代表者 |
張 旭芳 金沢大学, ナノマテリアル研究所, 特任助教 (30857404)
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| 研究期間 (年度) |
2020-04-01 – 2022-03-31
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| キーワード | Diamond inversion MOSFET / Al2O3/diamond interface / Electrical property / Characterization |
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| 研究実績の概要 |
We fabricated the world’s first inversion-channel MOSFET while it suffered from the low channel mobility. One main reason is attributed to the high Dit. Here, we propose a novel technique to form OH-termination to improve the interface quality of Al2O3-diamond by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. The interface quality is significantly improved based on our careful electrical characterization. Furthermore, the trap properties at Al2O3-diamond interface were examined by conductance method. This study is meaningful for deep understanding of the interface states and is beneficial for developing more effective passivation techniques to improve the interface quality and device performance.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
In this project, aiming at the low channel mobility of the inversion-type diamond MOSFFETs, which is mainly attributed to the high interface state density, the OH-termination was achieved by using H-diamond followed by wet annealing. The interface trap density is reduced and the trap property at Al2O3/diamond interface is elucidated, and the corresponding work was published on CARBON and APL.
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| 今後の研究の推進方策 |
During FY 2021, we will further investigate the effect of border traps in the Al2O3 by using the equivalent circuit model, to understand their effect on the device performance of diamond MOSFETs. Moreover, we would like to use the split C-V method to clarify the mechanism of the carrier transport of the diamond MOSFET.
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| 次年度使用額が生じた理由 |
Since COVID-19, I cannot attend the international conferences and a small amount of the funding is left. During FY2021, I will use this budget to buy more diamond substrates and if possible, I would like to attend international conferences.
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