| 研究実績の概要 |
Aiming at the low channel mobility of world’s first inversion-type p-channel diamond MOSFETs, we focused on the main limiting factor of the high interface state density at Al2O3/diamond interface. We proposed a novel technique to form OH-termination by using the hydrogenated diamond surface followed by wet annealing. The interface quality is significantly improved. Also, the trap properties at Al2O3-diamond interface were examined by high-low C-V method and conductance method. Besides, we applied the OH-termination formation technique and successfully fabricated the inversion-type p-channel heteroepitaxial diamond MOSFETs and made the electrical characterization.
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