絶縁物からの二次電子放出機構の解明と二次電子収率データベース構築

2010 年度 研究成果報告書

• 研究課題/領域番号: 21686005
• 研究種目: 若手研究(A)
• 配分区分: 補助金
• 研究分野: 薄膜・表面界面物性
• 研究機関: 大阪大学
• 研究代表者: 永富 隆清 大阪大学, 工学研究科, 助教 (90314369)
• 研究期間 (年度): 2009 – 2010
• キーワード: 二次電子 / 絶縁物 / エキソ電子

研究概要

エキソ電子検出システムの開発を進めると共に,パルスイオン照射システムを開発・改良し,絶縁物の二次電子収率測定系を開発してその測定精度を向上させた.さらに絶縁物の実材料におけるガス吸着等による二次電子収率の変化を測定するシステムを構築し,収率変化を定量的に捉えることに成功した.また,二次電子データベース構築等については,日本学術振興会産学研究協力委員会である第141委員会内に設置した専門委員会において,材料・デバイスを製造している企業等と連携した研究活動を行った.

研究成果

• [雑誌論文] Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels (2011)
  • 著者名/発表者名: K.Yoshino, T.Nagatomi, Y.Morita, T.Oue, N.Kosugi, M.Nishitani, M.Kitagawa, Y.Takai
  • 雑誌名: Japanese Journal of Applied Physics Vol.50 ページ: 026201-1-026201-10
  • 査読あり
• [雑誌論文] Surface Excitations in Surface Electron Spectroscopies Studied by Reflection Electron Energy Loss Spectroscopy and Elastic Peak Electron Spectroscopy (2010)
  • 著者名/発表者名: T.Nagatomi, S.Tanuma
  • 雑誌名: Analytical Science Vol.26 ページ: 165-176
  • 査読あり
• [雑誌論文] Surface Energy Loss Processes in XPS Studied by Absolute Reflection Electron Energy Loss Spectroscopy (2010)
  • 著者名/発表者名: T.Nagatomi, K.Goto
  • 雑誌名: Journal of Electron Spectroscopy and Related Phenomena Vol.178-179 ページ: 178-185
  • 査読あり
• [雑誌論文] Photoemission Electron Spectroscopy III: Satellites by Extended Excitations (2010)
  • 著者名/発表者名: J.D.Lee, T.Nagatomi, G.Mizutani, K.Endo
  • 雑誌名: Journal of Surface Analysis Vol.16 ページ: 196-213
  • 査読あり
• [雑誌論文] In Situ Observation of Change in Surface Atomic Arrangement of Sc-O/W (100) System during Phase Transition at High Temperature (2010)
  • 著者名/発表者名: T.Nagatomi, Y.Nakanishi, Y.Takai
  • 雑誌名: Journal of Vacuum Science and Technology A Vol.28 ページ: 199-206
  • 査読あり
• [雑誌論文] Effects of Wall Charge on Firing Voltage and Statistical Delay Time in Alternating Current Plasma Display Panels (2010)
  • 著者名/発表者名: K.Yoshino, T.Nagatomi, Y.Morita, T.Oue, N.Kosugi, M.Nishitani, M.Kitagawa, Y.Takai
  • 雑誌名: Japanese Journal of Applied Physics Vol.49 ページ: 040212-1-040212-3
  • 査読あり
• [雑誌論文] Absolutely Determined Inelastic Mean Free Paths for 300-3000 eV Electrons in 10 Elemental Solids (2010)
  • 著者名/発表者名: T.Nagatomi, S.Tanuma, K.Goto
  • 雑誌名: Surface and Interface Analysis Vol.42 ページ: 1537-1540
  • 査読あり
• [雑誌論文] Members of JSPS141-WG-SEY, "Working Group Report of Database Construction of Secondary Electron Yield (JSPS141-WG-SEY) [I] Precise Measurement by Charge Amplification Method" (2010)
  • 著者名/発表者名: T.Nagatomi, K.Goto, R.Shimizu
  • 雑誌名: Surface amd Interface Analysis Vol.42 ページ: 1541-1543
  • 査読あり
• [雑誌論文] Change in Work Function during Phase Transition of Sc-O/W (100) System at High Temperatures (2009)
  • 著者名/発表者名: Y.Nakanishi, T.Nagatomi, Y.Takai
  • 雑誌名: Applied Surface Science Vol.256 ページ: 1082-1087
  • 査読あり
• [雑誌論文] Inelastic Mean Free Path, Surface Excitation Parameter, and Differential Surface Excitation Parameter in Au for 300 to 3000 eV Electrons (2009)
  • 著者名/発表者名: T.Nagatomi, K.Goto
  • 雑誌名: Applied Surface Science Vol.256 ページ: 1200-1204
  • 査読あり
• [雑誌論文] In Situ Measurement of Surface Potential Developed on MgO Thin Film Surface under Ion Irradiation using Ion Scattering Spectroscopy (2009)
  • 著者名/発表者名: T.Nagatomi, T.Kuwayama, K.Yoshino, Y.Takai, Y.Morita, M.Nishitani, M.Kitagawa
  • 雑誌名: Journal of Applied Physics Vol.106 ページ: 104912-1-104912-11
  • 査読あり
• [雑誌論文] Influences of Measurement Conditions on Etching Rate of GaAs/AlAs Superlattice in Auger Electron Spectroscopy Sputter Depth Profiling (2009)
  • 著者名/発表者名: T.Nagatomi, T.Bungo, Y.Takai
  • 雑誌名: Journal of Surface Analysis Vol.15 ページ: 329-332
  • 査読あり
• [雑誌論文] Photoemission Electron Spectroscopy I : Histry and Overview (2009)
  • 著者名/発表者名: J.D.Lee, T.Nagatomi, G.Mizutani K.Endo
  • 雑誌名: Journal of Surface Analysis Vol.16 ページ: 42-63
  • 査読あり
• [雑誌論文] Photoemission Electron Spectroscopy II : Satellites by Local Excitation (2009)
  • 著者名/発表者名: J.D.Lee, T.Nagatomi, G.Mizutani, K.Endo
  • 雑誌名: Journal of Surface Analysis Vol.16 ページ: 127-152
  • 査読あり
• [雑誌論文] Incident Angle and Energy Dependences of Low-Energy Ar^+ Ion Sputtering of GaAs/AlAs Multilayered System (2009)
  • 著者名/発表者名: T.Nagatomi, T.Bungo, Y.Takai
  • 雑誌名: Surface and Interface Analysis Vol.41 ページ: 581-589
  • 査読あり
• [雑誌論文] Investigation of Measurement Conditions of Metastable De-excitation Spectroscopy of MgO Thin Films Used for Plasma Display Panels
  • 著者名/発表者名: K.Yoshino, Y.Morita, T.Nagatomi, M.Terauchi, T.Tsujita, T.Nakayama, Y.Yamauchi
  • 雑誌名: Journal of Surface Analysis (in press)
  • 査読あり
• [学会発表] Effects of Heating in Air on Metastable De-Excitation Spectroscopy Spectra of MgO and CaO Films (2010)
  • 著者名/発表者名: K.Yoshino, Y.Morita, M.Nishitani, T.Nagatomi, Y.Takai, Y.Yamauchi
  • 学会等名: 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan International Sumposium on Surface Analysis (PSA-10)
  • 発表場所: Gyeongju, Korea.
  • 年月日: 20101003-20101007
• [学会発表] High Depth Resolution Auger Depth Profiling using a 85^°-High-Angle Inclined Holder (2010)
  • 著者名/発表者名: T.Ogiwara, T.Nagatomi, K.J.Kim, S.Tanuma
  • 学会等名: 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan International Sumposium on Surface Analysis (PSA-10)
  • 発表場所: Gyeongju, Korea.
  • 年月日: 20101003-20101007
• [学会発表] Measurement of Secondary Electron Yield by Charge Amplification Method (2010)
  • 著者名/発表者名: T.Miyagawa, M.Inoue, T.Iyasu, Y.Hashimoto, K.Goto, R.Shimizu, T.Nagatomi
  • 学会等名: 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan International Sumposium on Surface Analysis (PSA-10)
  • 発表場所: Gyeongju, Korea.
  • 年月日: 20101003-20101007
• [学会発表] Band Alignment and Defect States in Amorphous Si-N Compounds on Si Substrates (2010)
  • 著者名/発表者名: S.Heo, J.G.Chung, H.I.Lee, J.C.Lee, G.S.Park, D.Tahir, S.K.Oh, H.J.Kang, T.Nagatomi, Y.Takai
  • 学会等名: 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan International Sumposium on Surface Analysis (PSA-10)
  • 発表場所: Gyeongju, Korea.
  • 年月日: 20101003-20101007
• [学会発表] Surface Defect States of MgO Films (2010)
  • 著者名/発表者名: S.Heo, J.G.Chung, H.I.Lee, J.C.Lee, G.S. Park, D.Tahir, S.K.Oh, H.J.Kang, T.Nagatomi, Y.Takai
  • 学会等名: 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan International Sumposium on Surface Analysis (PSA-10)
  • 発表場所: Gyeongju, Korea.
  • 年月日: 20101003-20101007
• [学会発表] Change in Ion-Induced Secondary Electron Yield of MgO Film Caused by Heating in Air (2010)
  • 著者名/発表者名: Y.Murasawa, J.Azargal, K.Yoshino, T.Nagatomi, Y.Takai, Y.Morita, M.Nishitani
  • 学会等名: 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan International Sumposium on Surface Analysis (PSA-10)
  • 発表場所: Gyeongju, Korea.
  • 年月日: 20101003-20101007
• [学会発表] igh-Sensitive Depth Profiling Analyses of Delta-Doped Layers Specimens with Glancing Angle Irradiation and Detection Method (2010)
  • 著者名/発表者名: H.Tanishiki, T.Ogiwara, T.Nagatomi, Y.Takai, K.J.Kim, S.Tanuma
  • 学会等名: 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan International Sumposium on Surface Analysis (PSA-10)
  • 発表場所: Gyeongju, Korea.
  • 年月日: 20101003-20101007
• [学会発表] High Depth Resolution Auger Depth Profiling Analysis Using Inclined Holder (2010)
  • 著者名/発表者名: T.Ogiwara, T.Nagatomi, S.Tanuma
  • 学会等名: Microscopy & Microanalysis 2010
  • 発表場所: Portland, USA.
  • 年月日: 20100801-20100805
• [学会発表] How do we determine interface width and interface position of depth profile?-Definition in ISO documents and application to practical analysis- (2010)
  • 著者名/発表者名: T.Nagatomi
  • 学会等名: The 1st Meeting of Korean-Chinese-Japanese Cooperative Program on "Materials Research with Emphasis on Activities Relating to VAMAS"
  • 発表場所: Deajeon, Korea.
  • 年月日: 20100308-20100309
• [学会発表] Mechanism of Secondary electron Emission (2010)
  • 著者名/発表者名: T.Nagatomi
  • 学会等名: Korea-Japan PDP Forum 2010
  • 発表場所: Jeju, Korea.
  • 年月日: 20100220-20100221
• [学会発表] Determination of IMFP, SEP and DSEP by absolute REELS analysis (2010)
  • 著者名/発表者名: T.Nagatomi
  • 学会等名: Hungarian-Japanese Joint Working Seminar on Studies of Fundamental Parameter Database and Atomic Processes for High Precision Quantitative Analysis using X-Ray Photoelectron Spectroscopy (in the frame of the bilateral MTA-JSPS scientific research cooperation project)
  • 発表場所: Debrecen, Hungary.
  • 年月日: 2010-10-27
• [学会発表] Members of JSPS141-WG-SEY, "Working Group Report of Database Construction of Secondary Electron Yield (JSPS141-WG-SEY) [I] Precise Measurement by Charge Amplification Method" (2009)
  • 著者名/発表者名: T.Nagatomi, K.Goto, R.Shimizu
  • 学会等名: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices '09 (ALC'09)
  • 発表場所: Hawaii, USA.
  • 年月日: 20091206-20091211
• [学会発表] Absolutely Determined Inelastic Mean Free Pathes for 300-3000 eV Electrons in 10 Elemental Solids (2009)
  • 著者名/発表者名: T.Nagatomi, S.Tanuma, K.Goto
  • 学会等名: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices '09 (ALC'09)
  • 発表場所: Hawaii, USA.
  • 年月日: 20091206-20091211
• [学会発表] In Situ Measurement of Surface Potential Induced on MgO Thin Film Surface under Ion Irradiation using Ion Scattering Spectroscopy (2009)
  • 著者名/発表者名: T.Nagatomi, T.Kuwayama, K.Yoshino, Y.Morita, M.Nishitani, M.Kitagawa, Y.Takai
  • 学会等名: 5th International Workshop on High-Resolution Depth Profiling (HRDP-5)
  • 発表場所: Kyoto, Japan.
  • 年月日: 20091115-20091119
• [学会発表] Electron Inelastic Mean Free Path and Surface Excitation Parameter in 10 Elemental Solids Determined by Absolute REELS analysis over 300-3000 eV Range (2009)
  • 著者名/発表者名: T.Nagatomi, S.Tanuma, K.Goto
  • 学会等名: 13th European Conference on Application of Surface and Interface Analysis (ECASIA'09)
  • 発表場所: Antalya, Turkey.
  • 年月日: 20091018-20091023
• [学会発表] Influence of Wall Charges on Electron Emission from MgO Layer in AC-PDP (2009)
  • 著者名/発表者名: T.Nagatomi
  • 学会等名: Japan-Korea PDP Forum'09
  • 発表場所: Kyoto, Japan.
  • 年月日: 2009-07-11
• [備考] ホームページ等
  • URL: http://www-atom.mls.eng.osaka-u.ac.jp/