| 研究実績の概要 |
A single crystal diamond (SCD) substrate is processed by plasma-assisted polishing (PAP) using four types of polishing plates, the quartz glass is the most suitable to obtain an atomically smooth surface with high material removal rate.
As the polishing pressure applied to the SCD substrate varied, the isotropic chemical removal action was dominant when the PAP was performed at low polishing pressures such as 62.5 kPa, whereas the anisotropic mechanically induced removal action was dominant when the PAP was performed at high polishing pressures such as 350.0 kPa. In contrast, changing the sliding speed between the polishing plate and the SCD substrate did not affect the material removal mechanism of PAP.
PAP was damage-free when applied to the polishing of SCD substrate.
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