| 研究課題/領域番号 |
21K14522
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| 研究機関 | 東北大学 |
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研究代表者 |
NGUYEN THIVANANH 東北大学, 先端スピントロニクス研究開発センター, 助教 (20840101)
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| 研究期間 (年度) |
2021-04-01 – 2023-03-31
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| キーワード | spintronics / magnetization dynamics / Functional oxides / RuO2 / antiferromagnetic / Hall measurement / ferromagnetic resonance |
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| 研究実績の概要 |
We have investigated the magnetization switching induced by spin-orbit torque (SOT) in the Functional oxide/CoFeB system. The crystallinity was optimized by the amount of oxygen gas pressure in the sputtering process which was confirmed by the XRD and RHEED measurements. The optimized condition for the preparation of the functional oxide thin film enabled the current-induced magnetization switching in the in-plane anisotropy CoFeB film, which was confirmed by using the harmonic Hall measurement. The results showed that the SOT- induced magnetization switching was realized thanks to the oxidation of functional oxide. These achievements would open a route for the further investigations of the high SOT efficiency toward the application in oxide-based spintronics.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The achievements here are on the progress of investigation of the SOT-induced magnetization switching in the Functional Oxide/Ferromagnetic (FO/FM) system. Since the fabrication of the FO layer using the sputter system usually needs effort, we have focused on the control of the crystallinity of the FO layer by optimizing the fabrication process (oxygen gas, substrate temperature, annealing process), and by taking the advantages of the crystallinity of the substrates (Si, c-Al2O3 and TiO2 substrates). The optimization of stacking structure was also done for FO/FM systems for the investigation of their dynamic magnetic properties and the magnetization switching in the FO/CoFeB systems under different oxygen incorporation levels.
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| 今後の研究の推進方策 |
For the next plans, we focus on the following research topics:
1. Investigation of the dynamics magnetic properties in the Functional oxide/ferromagnetic (RuO2/CoFeB) system with various conditions such as the change in the crystal anisotropy, layer thickness, deposition condition.
2. The SOT induced magnetization reversal under various conditions such as the crystal structure, and/or the electric field, and/or the electromagnetic field.
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