研究課題/領域番号 |
21K14562
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研究機関 | 大阪大学 |
研究代表者 |
EMPIZO MELVIN 大阪大学, レーザー科学研究所, 助教 (70796432)
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研究期間 (年度) |
2021-04-01 – 2024-03-31
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キーワード | Optical material / Crystal growth / Gamma ray / Irradiation / Spectroscopy |
研究実績の概要 |
SrBrO7 (SBO) single crystals have been successfully fabricated by Kyropolous growth method using different growth parameters including precursor purity and growth rate. The as-grown crystals were subsequently characterized using analytical techniques such as optical microscopy, vacuum ultraviolet (VUV) transmittance spectroscopy, and x-ray diffraction spectroscopy. Laser-induced damage investigations have also been performed through single-shot and multi-shot irradiation. High-quality, b-axis-oriented SBO single crystals with 100-mm dimensions (large), up to 80 % VUV transmittances, and high deep ultraviolet (DUV) laser-induced damage resistance have been successfully prepared by Kyropolous growth method. These results have already been submitted for publication with one paper just recently been accepted and the other under review.
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現在までの達成度 (区分) |
現在までの達成度 (区分)
1: 当初の計画以上に進展している
理由
The research aim of fabricating more than 60-mm SBO crystals and one out of three scientific publications have been achieved. The laser-induced damage of the Kyropolous-grown crystals has also been investigated under single-shot and multi-shot irradiation.
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今後の研究の推進方策 |
In the next fiscal year, the Kyropoulos-grown SBO single crystals will be irradiated with gamma rays from a cobalt-60 source. The irradiation will be carried out with different absorbed doses, and the crystals' structural and optical properties will be evaluated using a variety of characterization techniques. Gamma-ray irradiation effects on the crystals properties will be determined by comparing the results before and after irradiation. The changes in the crystal properties will likewise be examined in relation to the absorbed doses. Detailed analysis is crucial in understanding the damage formation mechanisms in order to improve the Kyropoulos growth method for the fabrication of radiation-resistant SBO single crystals.
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次年度使用額が生じた理由 |
In the next fiscal year, the amount will be used for the purchase of high-purity chemicals, heating elements, cutting and polishing supplies, and vacuum parts for growth and characterization. Some of the amount will also be used for the travel expenses for the conduct of experiments and the presentation of results in Japan and overseas, for the publications fees of journals and meeting fees of conferences, and for the usage fees of the joint-use facilities for irradiation and analysis.
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