光熱変換技術を用いた結晶粒界などで光散乱の多い半導体薄膜の光吸収スペクトル測定

2012 年度 研究成果報告書

• 研究課題/領域番号: 22560024
• 研究種目: 基盤研究(C)
• 配分区分: 補助金
• 応募区分: 一般
• 研究分野: 薄膜・表面界面物性
• 研究機関: 宮崎大学
• 研究代表者: 碇 哲雄 宮崎大学, 工学部, 教授 (70113214)
• 研究期間 (年度): 2010 – 2012
• キーワード: 光熱変換スペクトル / 半導体薄膜材料 / 光散乱

研究概要

この研究では、高感度 PPTS 法(光熱変換分光法)を用いて、光励起キャリアの発熱緩和過程を調べるという実験手段を用いて、大きな結晶粒界や組成変動をもつ薄膜半導体光デバイス材料の光吸収スペクトルを測定する実験手法を開発し、量子井戸薄膜など種々の試料について実験を実施し、その有用性を確認した。

研究成果

• [雑誌論文] Study of bandgap energies of Cu(In,Ga)Se2 thinfilms grown by a sequential evaporation methodusing piezoelectric photothermal spectroscopy (2012)
  • 著者名/発表者名: T. Mori, Y. Motono, W. Ding, A. Fukuyama, T.Yamaguchi and T. Ikari
  • 雑誌名: Japanese Journal of Applied Physics 51 巻: 51 ページ: 07GA07-1-4
  • DOI: DOI:10.1143/JJAP .51.07GA07
  • 査読あり
• [雑誌論文] Non-radiative carrier recombination mechanismin the InGaAs/GaAsP strain-balanced quantumwell solar cells with different number of stacks byusing a piezoelectric photothermal method (2012)
  • 著者名/発表者名: A. Fukuyama, Y. Nakano, T. Aihara, H. Fujii,M. Sugiyama, Y. Nakano and T. Ikari
  • 雑誌名: AIP Conference Proceedings 1477 巻: 1477 ページ: 185-188
  • 査読あり
• [雑誌論文] Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement (2012)
  • 著者名/発表者名: A. Fukuyama, D. Ishibashi, Y. Sato, K. Sakai,H. Suzuki, K. Nishioka and T. Ikari
  • 雑誌名: Journal of Non-Crystalline Solids 358 巻: 358 ページ: 2206-2208
  • DOI: DOI:10.1016/j.jnoncrysol.2011.11.016
  • 査読あり
• [雑誌論文] Temperature dependence of the optical gap ofdiamond-like carbon films investigated by apiezoelectric photothermal spectroscopy (2011)
  • 著者名/発表者名: W. Ding, Y. Nakano, R. Yamamoto, K. Sakai,H. Nakazawa, A. Fukuyama, and T. Ikari
  • 雑誌名: Temperature dependence of the optical gap ofdiamond-like carbon films investigated by apiezoelectric photothermal spectroscopy 巻: 10 ページ: 66-70
  • DOI: DOI:10.1016/j.egypro.2011.10.154
  • 査読あり
• [雑誌論文] Determination of exciton binding energy ofGaInNAs quantum well structures by piezoelectric photothermal spectroscopycompared with photoreflectance measurements (2011)
  • 著者名/発表者名: K. Kashima, A. Fukuyama, K. Sakai, H.Yokoyama, M. Kondow, and T. Ikari
  • 雑誌名: Japanese Journal of Applied Physics 巻: 50 ページ: 06GH09-1-4
  • DOI: DOI:10.1143/JJAP .50.06GH09
  • 査読あり
• [雑誌論文] Effect of silicon doping on the photoluminescenceand photoreflectance spectra of catalyst-freemolecular beam epitaxy-vapor liquid solid grownGaAs nanowires on (111) Si substrate (2011)
  • 著者名/発表者名: A. Suzuki, A. Fukuyama, T. Ikari, Ji-HyunPaek, and M. Yamaguchi
  • 雑誌名: Japanese Journal of Applied Physics 巻: 50 ページ: 06GH08-1-4
  • DOI: DOI:10.1143/JJAP.50.06GH08
  • 査読あり
• [雑誌論文] Effect of the molecular weight of a polyethyleneglycol on the photoluminescence spectra ofporous TiO2 films for dye-sensitized solar cells (2011)
  • 著者名/発表者名: K. Sakai, Y. Hirashita, T. Aihara, A.Fukuyama,T. Ikari, K. Kukita, and S. Furukawa
  • 雑誌名: Thin Solid Films 巻: 519 ページ: 5760-5762
  • DOI: DOI:10.1016/j.tsf.2010.12.205
  • 査読あり
• [雑誌論文] The study of bandgap energies of Cu(In, Ga)Se2thin films grown by a sequential evaporationmethod using a photothermal spectroscopyProc (2011)
  • 著者名/発表者名: T. Mori, Y. Motono, W. Ding, A. Fukuyama, T.Yamaguchi, and T. Ikari
  • 雑誌名: Ultrasonic Electronics Symposium 巻: vol. 32 ページ: 61-62
  • 査読あり
• [雑誌論文] Detection of Thermal Energy Loss of thephotoexcited Carriers in Polycrystalline Siliconp-n Junction Interface Region by a PiezoelectricPhotothermal Study (2010)
  • 著者名/発表者名: H. Tamura, A. Fukuyama, K. Sakai, and T.Ikari
  • 雑誌名: Proc. Ultrasonic Electronics Symposium 巻: vol. 31 ページ: 31-32
  • 査読あり
• [雑誌論文] Nitrogen related deep levels in GaAsN filmsinvestigated by a temperature dependence ofpiezoelectric photothermal signal
  • 著者名/発表者名: K. Kashima, A. Fukuyama, Y. Nakano, M.Inagaki, H. Suzuki, M. Yamaguchi, and T. Ikari
  • 雑誌名: Materials Science Forum 725 巻: 725 ページ: 93-96
  • DOI: DOI:10.4028/www.scientific.net/MSF .725.93
  • 査読あり
• [学会発表] Non-radiative carrier recombination inInGaAs/GaAsP strain-balanced superlattice solarcel (2012)
  • 著者名/発表者名: T. Aihara and T. Ikari
  • 学会等名: American Vacuum Society 59th Int. Symposium& Exhibition (AVS 59th)
  • 発表場所: Tampa, USA
  • 年月日: 20121028-1102
• [学会発表] Piezoelectric photothermal spectra and carriernonradiative recombination in InGaAs/GaAsPsuperlattice structured solar cell (2012)
  • 著者名/発表者名: T. Ikari and A. Fukuyama
  • 学会等名: American Vacuum Society 59th Int. Symposium& Exhibition (AVS 59th)
  • 発表場所: Tampa, USA
  • 年月日: 20121028-1102
• [学会発表] The effect of substrate on the GaN on Si substrateby photoreflectance and photoluminescenceInt. (2012)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: Workshop on Nitride Semiconductors(IWN2012)
  • 発表場所: Sapporo, Japan
  • 年月日: 20121014-19
• [学会発表] Photoluminescence and photoreflectance spectraof C60 and Si co-doped GaAs layers (2012)
  • 著者名/発表者名: W. Ding and T. Ikari
  • 学会等名: Int. Conf. on Diamond and Carbon Materials(ICDCM2012 or Diamond2012)
  • 発表場所: Granada, Spain
  • 年月日: 20120902-06
• [学会発表] Effect of Be doping on the optical properties ofcatalyst free MBE-VLS grown GaAs nanowireson Si (111) substrate (2012)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: Int. Conf. on Superlattices, Nanostructures, andNanodevices (icsnn 2012)
  • 発表場所: Dresden, Germany
  • 年月日: 20120626-27
• [学会発表] Effect of grain boundaries on the thermal andelectron diffusivity of multi-crystalline siliconinvestigated by a photothermal microscopy (2012)
  • 著者名/発表者名: T. Ikari and D. Fournier
  • 学会等名: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • 発表場所: Strasbourg, France
  • 年月日: 20120514-18
• [学会発表] Photoluminescence and piezoelectricphotothermal spectra of Cu(In,Ga)Se2 thin filmsby a sequential evaporation method (2012)
  • 著者名/発表者名: W. Ding and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • 発表場所: Strasbourg, France
  • 年月日: 20120514-18
• [学会発表] Effect of N composition on temperaturedependence of band gap energies of GaAsN thinfilms grown by Chemical Beam Epitaxy (2012)
  • 著者名/発表者名: A. Fukuyama and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2012 (E-MRS 2012)
  • 発表場所: Strasbourg, France
  • 年月日: 20120514-18
• [学会発表] Non-radiative carrier recombination mechanismin the InGaAs/GaAsP strain-balanced quantumwell solar cells with different number of stacks byusing a piezoelectric photothermal method (2012)
  • 著者名/発表者名: Y. Nakano and T. Ikari
  • 学会等名: 8th International Conf. on ConcentratingPhotovoltaic Systems (CPV-8)
  • 発表場所: Toledo, Spain
  • 年月日: 20120416-18
• [学会発表] Effects of growth method on localized state ofnitrogen atoms in GaAsN thin films (2011)
  • 著者名/発表者名: S. Yamamoto7 and T. Ikari
  • 学会等名: 21th International Photovoltaic Science andEngineering Conference (PVSEC-21)
  • 発表場所: Fukuoka, Japan
  • 年月日: 20111128-1202
• [学会発表] Nitrogen related deep levels in GaAsN filmsinvestigated by a temperature variation ofpiezoelectric photothermal signal amplitude14th International Conference on Defects -Recognition (2011)
  • 著者名/発表者名: K. Kashima and T. Ikari
  • 学会等名: Imaging and Physics inSemiconductors (DRIP14)
  • 発表場所: Miyazaki, Japan
  • 年月日: 20110925-29
• [学会発表] Temperature dependence of the optical gap ofdiamond-like carbon films by piezoelectricphotothermal and photoluminescencespectroscopies (2011)
  • 著者名/発表者名: Wen Ding, and T. Ikari
  • 学会等名: 22nd European Conference on Diamond,Diamond-Like Materials, Carbon Nanotubes andNitrides (Diamond 2011)
  • 発表場所: Garmisch-Partenkirchen, Germany
  • 年月日: 20110904-08
• [学会発表] Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement (2011)
  • 著者名/発表者名: A. Fukuyama and T. Ikari
  • 学会等名: 24th International Conference on Amorphous andNano-Crystallie Semiconductors (ICANS24)
  • 発表場所: Nara, Japan
  • 年月日: 20110821-26
• [学会発表] Photoluminescence and photoreflectance spectraof silicon related impurity levels in catalyst freeMBE-VLS grown GaAs nanowires on (111) Sisubstrate (2011)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: 19th Conference on Modulated SemiconductorStructures (MSS15) joint with internationalconference on Electric Properties ofTow-Dimensional Electron Systems(EP2DS19/MSS15)
  • 発表場所: Tallahassee, Florida, USA
  • 年月日: 20110625-29
• [学会発表] Photoluminescence studies of vacancy complex inp-type Li and Ni co-doped ZnO samples grownby a pulsed laser deposition (2011)
  • 著者名/発表者名: K. Sakai and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
  • 年月日: 20110509-13
• [学会発表] Temperature dependence of the optical gap ofdiamond-like carbon films by using apiezoelectric photothermal spectroscopy (2011)
  • 著者名/発表者名: W. Ding and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
  • 年月日: 20110509-13
• [学会発表] Investigation of deep trap centers by atemperature variation of the signal amplitude inthe piezoelectric photothermal spectra (2011)
  • 著者名/発表者名: K. Kashima and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
  • 年月日: 20110509-13
• [学会発表] Photoluminescence and photoreflectance studiesof a silicon related impurity levels in catalyst freeMBE-VLS grown GaAs nanowires on (111) Sisubstrate (2011)
  • 著者名/発表者名: A. Suzuki and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
  • 年月日: 20110509-13
• [学会発表] Effect of N composition on temperaturedependence of band gap energies of GaAsN thinfilms grown by Chemical Beam Epitaxy (2011)
  • 著者名/発表者名: S. Yamamoto and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
  • 年月日: 20110509-13
• [学会発表] Photoluminescence and piezoelectricphotothermal spectra of Cu(In,Ga)Se2 thin filmsby a sequential evaporation method (2011)
  • 著者名/発表者名: T. Mori and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2011 (E-MRS 2011)
  • 発表場所: Nice, France
  • 年月日: 20110509-13
• [学会発表] Low-temperature photoluminescence ofphosphorous-doped ZnO nanowires synthesizedby nanoparticle-assisted pulsed-laser deposition (2010)
  • 著者名/発表者名: K. Sakai and T. Ikari
  • 学会等名: Premier Technical Conference of IEEE Region 10(TENCON 2010)
  • 発表場所: Fukuoka, Japan
  • 年月日: 20101121-24
• [学会発表] Effect of the molecular weight of a polyethyleneglycol on the photoluminescence spectra ofporous TiO2 films for dye-sensitized solar cells (2010)
  • 著者名/発表者名: K. Sakai and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • 発表場所: Strasbourg, France
  • 年月日: 20100707-11
• [学会発表] Effect of rapid thermal annealing on well widthdependences of exciton binding energy inGaInNAs/GaAs single quantum wells (2010)
  • 著者名/発表者名: T. Ikari and M. Kondow
  • 学会等名: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • 発表場所: Strasbourg, France
  • 年月日: 20100707-11
• [学会発表] Determination of the band gap and its excitonbinding energy of 100nm thick GaInNAs films by using a piezoelectric photo-thermal and aphoto-reflectance spectroscop (2010)
  • 著者名/発表者名: A. Fukuyama and T. Ikari
  • 学会等名: The European Materials Research Society SpringMeeting 2010 (E-MRS 2010)
  • 発表場所: Strasbourg, France
  • 年月日: 20100707-11
• [備考]
  • URL: http://www.cc.miyazaki-u.ac.jp/mdeee03/ikari/IK_main01.htm