半導体物性物理に基づいた周波数バンド可変テラヘルツ電磁波素子構造設計原理構築

2012 年度 研究成果報告書

• 研究課題/領域番号: 22760010
• 研究種目: 若手研究(B)
• 配分区分: 補助金
• 研究分野: 応用物性・結晶工学
• 研究機関: 滋賀県立大学
• 研究代表者: 竹内日 出雄 滋賀県立大学, 工学部, 准教授 (50512779)
• 研究期間 (年度): 2010 – 2012
• キーワード: 光物性

研究概要

周波数可変 THz エミッタの設計原理の構築を行った。アンドープGaAs/n-type GaAs という単純なエピ構造に着目した。i-GaAs 層厚を制御することにより,サージ電流を制御し周波数可変性を実現した。縦光学(LO)フォノン・プラズモンを用いた周波数可変エミッタの研究を行った。さらに内部電場の増強に着目し,歪多重量子井戸を用いてコヒーレント LO フォノンからの単色性 THz エミッタの開発を行った。

研究成果

• [雑誌論文] Intense monochromatic terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells (2012)
  • 著者名/発表者名: H. Takeuchi, S.Asai, S. Tsuruta, and M,Nakayama
  • 雑誌名: Applied Physics Letters 巻: 100 ページ: 242107 1-4
  • URL: http://dx.doi.org/10.1016/j.phpro.2012.03.687
  • 査読あり
• [雑誌論文] Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method (2012)
  • 著者名/発表者名: H. Takeuchi, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
  • 雑誌名: Physic Procedia 巻: 29 ページ: 30-35
  • 査読あり
• [雑誌論文] Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer (2012)
  • 著者名/発表者名: H. Takeuchi, S. Tsuruta, and M. Nakayama
  • 雑誌名: Physica Status Solidi C 9 巻: C9 ページ: 2610-2613
  • URL: http://dx.doi.org/10.1002/pssc.201200160
  • 査読あり
• [雑誌論文] Dynamical characteristicsof a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy (2012)
  • 著者名/発表者名: H. Takeuchi, S. Tsuruta, and M. Nakayama
  • 雑誌名: AIP Conference Proceedings 巻: 1506 ページ: 73-78
  • URL: http://link.aip.org/link/doi/10.1063/1.4772529
  • 査読あり
• [雑誌論文] Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures (2011)
  • 著者名/発表者名: H. Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
  • 雑誌名: Physica Status Solidi C8 巻: C8 ページ: 343-345
  • URL: http://dx.doi.org/10.1002/pssc.201000396
  • 査読あり
• [雑誌論文] Frequency-tunable terahertz electro- magnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond- range carrier-transport processes (2011)
  • 著者名/発表者名: H. Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
  • 雑誌名: Journal of Luminescence 巻: 131 ページ: 531-534
  • URL: http://dx.doi.org/10.1016/j.jlumin.2010.09.022
  • 査読あり
• [雑誌論文] Emission of the terahertz electro- magneticwave fromcoherent longitudinal optical phonons in a GaAs buffer layer opticallymaskedby a GaSb top epitaxial layer (2011)
  • 著者名/発表者名: H. Takeuchi, S. Tsuruta, and M. Nakayama
  • 雑誌名: Applied Physics Letters 巻: 98 ページ: 151905 1-3
  • URL: http://dx.doi.org/10.1063/1.3574541
  • 査読あり
• [雑誌論文] Terahertz spectroscopy of dynamics of coupling between the coherent longitudinal optical phonon and plasmon in the surge current of instantaneously photogenerated carriers flowing through the i-GaAs layer of an i-GaAs/n-GaAs epitaxial structure (2011)
  • 著者名/発表者名: H. Takeuchi, S. Tsuruta, and M. Nakayama
  • 雑誌名: JournalofApplied Physics 巻: 110 ページ: 0135151-6
  • URL: http://dx.doi.org/10.1063/1.3603046
  • 査読あり
• [雑誌論文] Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy (2011)
  • 著者名/発表者名: H. Takeuchi, S. Tsuruta, and M. Nakayama
  • 雑誌名: AIP Conference Proceedings 巻: 1416 ページ: 84-87
  • URL: http://dx.doi.org/10.1063/1.3603046
  • 査読あり
• [学会発表] Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer (2012)
  • 著者名/発表者名: H.Takeuchi
  • 学会等名: The 5th International Conference on Optical, Optelectronics, and Photonic Materials and Application (ICOOPMA)
  • 発表場所: Nara Prefectural New Public Hall, Nara, Japan.
  • 年月日: 2012-06-03
• [学会発表] Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy (2011)
  • 著者名/発表者名: H. Takeuchi
  • 学会等名: 15th International Conference on Narrow Gap Systems (NGS15)
  • 発表場所: Virginia Polytechnic Institute & State Universiherety, Virginia, USA.
  • 年月日: 2011-08-01
• [学会発表] Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method (2011)
  • 著者名/発表者名: H. Takeuchi
  • 学会等名: TheInternationalConference on Luminescence & Optical Spectroscopy of Condensed Matter 2011
  • 発表場所: Central Campus of the University of Michigan, AnnArbor, Michigan, USA
  • 年月日: 2011-06-26
• [学会発表] Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond range carrier-transport processes (2010)
  • 著者名/発表者名: H. Takeuchi
  • 学会等名: The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10)
  • 発表場所: APS Conference Center, Argonne National Laboratory, Argonne, Illinois, USA.
  • 年月日: 2010-06-20
• [学会発表] Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons usingundoped GaAs/n-type GaAs epitaxial layer structures (2010)
  • 著者名/発表者名: H. Takeuchi
  • 学会等名: The 37th International Symposium on Compound Semiconductors (ICSC2010)
  • 発表場所: Takamatsu Symbol Tower,Kagawa, Japan.
  • 年月日: 2010-05-31
• [図書] Wave Propagation, "Terahertz Electromagnetic Waves from Semiconductor Epitaxial Layer Structures: Small Energy Phenomena with a Large Amount of Information (2011)
  • 著者名/発表者名: H. Takeuchi
  • 総ページ数: Chapter 6
  • 出版者: INTEC
• [備考]
  • URL: http://www.a-phys.eng.osaka-cu.ac.jp/hikari-g/hikari-g2002/