| 研究課題/領域番号 |
22K04216
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| 研究機関 | 静岡大学 |
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研究代表者 |
Moraru Daniel 静岡大学, 電子工学研究所, 准教授 (60549715)
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| 研究期間 (年度) |
2022-04-01 – 2025-03-31
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| キーワード | silicon-on-insulator / pn diode / doping / single-charge tunneling / nanowire / codoping |
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| 研究実績の概要 |
Some achievements have been obtained directly in the present project, while others are tangentially related.
As a main result related to this project, we reported challenges in fabrication of silicon nanowire tunnel diodes. We also reported observation of single-electron tunneling in codoped silicon nanodevices made from silicon-on-insulator (SOI) nano-transistors and nano-diodes. Collaborative research work focused on optical characterization techniques that may be useful for Si nanodevices.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
As planned, new batches of silicon-on-insulator (SOI) nano-transistors and nano-diodes have been fabricated and characterized. The detailed analysis of these two types of devices, both containing codoped SOI nanoscale regions, confirmed the identification of signatures of single-charge tunneling, as reported in Nanomaterials (2023).
Our analysis also revealed the most important challenges in terms of technology for fabricating silicon nanowire tunnel diodes, as reported in another paper.
New techniques of investigation have been developed in different collaboration projects, with potential impact on the analysis of devices included in the current project.
The progress in first-principles simulations is less advanced, but studies of pn diodes containing individual dopants are under way.
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| 今後の研究の推進方策 |
In the next stage of research, the fabricated nano-transistors and nano-diodes will be characterized systematically in order to understand the possibility of tunneling transport mediated by dopants in such nanoscale devices. Mainly, the characterization will be carried out at cryogenic temperatures.
The effect of light illumination will also be analyzed in such codoped nanodevices, which offer the energy states to capture both electrons and holes from the absorbed photons.
The analysis of single-charge tunneling transport at low temperatures is expected to provide deeper insights into the role of dopants, supporting the undergoing first-principles simulation analysis.
A systematic characterization of SOI samples doped in different conditions will also provide new information.
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| 次年度使用額が生じた理由 |
During the FY2023, the grant was used only partially because some of the business trips were covered from different research funding, while some of the research expenses could not be implemented during the respective fiscal year due to some delays, especially delays in providing silicon-on-insulator (SOI) wafers in due time.
Due to the above reasons, a part of the research amount was carried forward to the next fiscal year and will be used to purchase necessary research materials and to support publication of the research results.
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