| 研究課題/領域番号 |
22K04885
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| 研究機関 | 国立研究開発法人物質・材料研究機構 |
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研究代表者 |
J. Wipakorn 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究員 (40748216)
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| 研究期間 (年度) |
2022-04-01 – 2025-03-31
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| キーワード | Nanowire / Nanostructure / Vapor-liquid-solid / CVD / Aluminum / Silicon |
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| 研究実績の概要 |
Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were parallelly investigated. Successfully addressing the major challenge of rapid Al catalyst oxidation by ex-situ and uncomplicated growth conditions allows for the potential to scale up the process while preventing the formation of deep-level traps resulting from catalyst contamination.
Al-catalyzed SiNWs grown on paper-thin polished and etched Si(111) wafers of 100 um- and 60 um-thick with high proficiency for minimizing interfacial defects and light absorption loss has been accomplished. Deep wet etching was observed as a simple technique for thin Si wafer preparation compared to the standard method of polishing by diamond slurry. Fabrication of thin Si NW solar cells with homojunction structure toward enhanced power conversion efficiency by hybrid nanostructures with Mn-doped CsPbCl3 perovskite nanocrystals using a simple drop-casting method has been optimized.
Hole-gas accumulation of Si/Ge core-shell NW heterostructures using Al-catalyst for core SiNW synthesis was successfully demonstrated. Type-II band alignment of p-type Si and intrinsic Ge heterojunction has been designed for induced hole-gas accumulation in the Ge channel to suppress impurity and surface scattering. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs grant major advantages for the application of vertical SiNW-based HEMT devices.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The studies on exploring the functionality of Al-catalyzed SiNWs were well-progressed as explained in the research achievement part. The experiments on sample preparations and characterizations could smoothly proceed following the research plan. The laboratory consumables and facilities could be provided without any trouble.
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| 今後の研究の推進方策 |
In this fiscal year, the experimental results will be continuously presented. More manuscripts will be submitted for publication. Extended investigation on double-hetero Si/Ge core-shell NW structures and the demonstration of their hole-gas accumulation will be elucidated. Some passivation techniques for NW interfacial defect reduction will be observed and more Al-catalyzed SiNW-based devices for various applications will be realized and developed.
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