| 研究実績の概要 |
This project studies dislocation-based plasticity in wurtzite semiconductors and investigates how light affects their nanoscale mechanical properties. In FY2023, we examined the effects of light on different slip systems in ZnO and GaN. Photoindentation experiments were conducted on wurtzite ZnO and GaN single crystals. Transmission electron microscope was adopted to verify the impact of light on dislocation behaviors. It was found that light tends to suppress the motion of both basal dislocations and pyramidal dislocations. Additionally, the unique distribution of nanoindentation-induced dislocations in ZnO should display promising functional properties. As for GaN, light illumination slightly affects dislocation nucleation, and shows a detectable influence on dislocation motion.
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