| 研究実績の概要 |
Additional materials characterization were performed to determine why Ar plasma treatment was able to improve both performance and stability in the fully solution processed a-IZO thin-film transistors unlike ultraviolet irradiation. We found that Ar plasma efficiently decomposed weak chemical bonds through ion bombardment, reduced impurities through radical reaction, and subsequently induced film densification. Synchrotron experiments (UPS, XANES, EXAFS) were also performed and confirmed the change in work function (UPS) of the Ar plasma-treated IZO and change in oxidation state and coordination (XANES and EXAFS) likely due to an increase of oxygen vacancies. We were also successful in inducing a similar semiconductor-to-conductor transformation via a cost-effective semiconductor laser. Furthermore, we also focused on further reducing the impurities in the oxide semiconductor precursor by developing a method to precipitate out these impurities before the deposition.
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