| 研究課題/領域番号 |
22K18957
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| 研究機関 | 国立研究開発法人物質・材料研究機構 |
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研究代表者 |
廖 梅勇 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (70528950)
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| 研究分担者 |
小泉 聡 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, グループリーダー (90215153)
SANG Liwen 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 独立研究者 (90598038)
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| 研究期間 (年度) |
2022-06-30 – 2025-03-31
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| キーワード | ダイヤモンド / MEMS / バンドエンジニアリング |
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| 研究実績の概要 |
This proposal is to modulate the bandgap of diamond by using our developed diamond MEMS technology. In this year, we fabicated single-crystal diamond MEMS structures such as cantilevers and double-clamped beams with different dimensions of length from 50 to 160 um, width around 10um, and thickness from 500nm to 4um. We etched the ion-implantation induced damages in diamond by using an efficient atomic scale etching method and improved the quality factor of the single-crystal diamond cantilever from 10000 to over 200000 within 10 hrs. We also succeeded in the electrostatic control of the diamond bending, which was evidenced by the resonance frequency measurements and resonance amplitude control. These work forms the basis for next-stage of strain controlling in single-crystal diamond.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The single-crystal diamond MEMS structures were fabricated and the crystal quality was improved as expected.
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| 今後の研究の推進方策 |
In this year, we will further reduce the single-crystal diamond MEMS resonator thickness to less than 300 nm. In such a case, we could bend the single-crystal diamond by external electrodes to achieve a large elastic deformation. Then, we will measure the photocurrent of the bended single-srytal diamond MEMS cantilevers. The strain and the energy bandgap of single-crystal diamond can thus be determined. To achieve this aim, high crystal diamond epiplayers will be further grown by tunning the growth parameters. After that, boron-doped single-crystal diamond epilayers will be grown and the related p-type diamond MEMS structures will be fabricated. The bending of the boron-doped p-type diamond MEMS will be demonstrated by external electric fields.
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