| 研究実績の概要 |
1.the feasible QCLs design with improved robustness on strain relaxation is predicted by using nonequilibrium green’s function (NEGF) models. We update our models by including the strain relaxation parameters along the quantum wells epitaxy directions, and also the threading dislocation defects scattering is also developed to convince the prediction; 2. By growing um-thick GaN/AlGaN cascade quantum wells, we confirm the current-bias characteristic consistently with the calculation of NEGF models. We also observe the intersubband electroluminescence at targeted frequency. This results confidences the next step for laser; 3. The laser cavity structures processing has been ongoing.
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| 今後の研究の推進方策 |
(1) to approach the lasing, FP cavity structure is used. The facet planes are challenging for GaN. We will develop the processing to realize the parallel mirror flat facets.
(2) at present, the main GaN/AlGaN epitaxy is based on polar plane directions, c-plane. Meanwhile, in views of the robustness of device realization, the nonpolar quantum wells structures will be more attractive. We will step into the development of GaN/AlGaN epitaxy on semi- or non-polar planes.
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