| 研究概要 |
We fabricated organic spin valves using magnetite as a high efficiency electrode, and 8-hydroxyquinoline aluminum (Alq3) were employed as the spacer layers. Magnetoresistance ratios of around 6% were obtained in Alq3-based spin valves at room temperature, which is one of the highest magnetoresistance ratios in organic spin valves reported thus far. The spin-dependent transport behavior in these spin valves were discussed. The magnetoresistance effect was systemically investigated by varying the thickness of the Alq3 layer. The MR ratio monotonously decreased with increasing Alq3 layer thicknesses. Moreover, the temperature dependence of the magnetoresistance ratios Alq3-based spin valves were evaluated to gain insight into the spin-dependent transport behavior. The multiple-step tunneling processes likely resulted in a decrease in the MR ratios with increasing Alq3 layer thickness, which is differ to the for C60 based devices. This study provides a useful method in designing organic spin materials and devices operated at room temperature.
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