| 研究課題/領域番号 |
25820336
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| 研究種目 |
若手研究(B)
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| 研究機関 | 独立行政法人物質・材料研究機構 |
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研究代表者 |
湯 代明 独立行政法人物質・材料研究機構, その他部局等, 研究員 (50646271)
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| 研究期間 (年度) |
2013-04-01 – 2015-03-31
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| キーワード | in situ microscopy / silicon nanowires / strain engineering |
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| 研究概要 |
Single crystalline Si nanowires with desired n-type or p-type were prepared. The nanowires are about 10-100 nm in diameter and about 10 μm in length, with thin oxide layers (~2 nm thick). The Si NWs were manipulated by a STM-TEM holder to test the electrical properties and the dependence on the applied mechanical loading. Preliminary results demonstrated huge enhancements of conductivity related to the strain. For example, the conductivity increased along with the tensile stress in a nonlinear relation due to a tensile strain ~ 3.0 %. And reversible change of conductivity as much as 4 folds is presented by a bending strain ~ 12 %.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
1: 当初の計画以上に進展している
理由
I have successfully measured the strain effects on the conductivity of Si NWs by in situ TEM approach.
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| 今後の研究の推進方策 |
Improvements of contact by in situ welding of low-melting point metals.
Fabrication of field effect transistors by twin-probe STM-TEM holder
Strain effects on electrical properties.
Understanding by theoretical calculations and modeling.
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| 次年度の研究費の使用計画 |
I was planning to go for conference in 2013, but I was too busy doing experiments and publications.
I plan to attend conference in 2014.
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