| 研究課題/領域番号 |
25820336
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| 研究機関 | 独立行政法人物質・材料研究機構 |
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研究代表者 |
湯 代明 独立行政法人物質・材料研究機構, その他部局等, 研究員 (50646271)
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| 研究期間 (年度) |
2013-04-01 – 2016-03-31
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| キーワード | in situ / silicon nanowire / strain engineering / electron microscopy |
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| 研究実績の概要 |
The purpose of the current research is to directly measure the intrinsic transport properties of Si nanowire transistors, and the strain effects on the mobility by in situ TEM method. Because of the large elastic limit due to a size effects, elastic strain as high as 5 % could be applied to the Si nanowires, and may lead to great enhancement of the performance of the 10 nm scale transistors.
In the fiscal year 2014, the following achievements have been achieved: (1) construction of 10 nm Si nanowire transistor inside a TEM; (2) direct measurements of the transport properties by three-terminal approach; (3) direct investigation of the strain effects on the electrical properties of the Si nanowires.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The research plan for year 2014 is to investigate on the strain effects on the mobility.
Nanowire transistors have been fabricated inside the TEM. In addition, the transport properties of the Si nanowires have been successfully tested. And the change of the mobility due to the elastic strain has been evaluated.
During the research, it was found that the surface and contact quality is critical for reliable electrical measurements. Therefore, the surface was treated by HF to remove the naturally grown SiO2 layer. And the contact was improved by various techniques, including (1) fixing the sample by conductive epoxy; (2) electron beam induced welding; (3) discharge induced tip melting.
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| 今後の研究の推進方策 |
In the fiscal year 2015, systematic measurement over the strain effect on the electron and hole motility will be carried out. In addition, the philosophy of strain engineering will be applied to other low dimensional systems. And the research results will be summarized and published in international journals.
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| 次年度使用額が生じた理由 |
Last year, I developed an evaluation method for investigating the strain effects on the transport properties, such as the resistivity, doping concentration, and importantly, the charge mobility. Specifically, I tested the voltage-current (I-V) dependence during the deformation (elongation and bending) process. By fitting the I-V curves, the transport properties parameters could be extracted. In next step, I will apply the evaluation method to Si nanowires with different doping types, so that the dependence of mobility of electron or holes could be investigated directly. Because the work is not complete, I saved some budget for next fiscal year to finish the work as stated above.
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| 次年度使用額の使用計画 |
Budget will be used for the fabrication of nanowires with desired doping and for the consumables for the in situ electron microscopy measurements.
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