| 研究実績の概要 |
In the fiscal year 2015, I explored the electro-mechanical properties of one dimensional nanostructures ranging from 10 nm to 1 nm level. The achievements have been summarized as follows: 10 nm scale silicon p-type transistors have been successfully fabricated inside TEM. By fitting the I-V curves at different strains, it was revealed that the mobility of the silicon nanowires could be enhanced 3.8 folds from 2.90 to 11.11 cm2/Vs under tension and 2.7 times from 11.89 to 31.80 cm2/Vs under bending. In addition, transistors down to 1 nm level have been successfully fabricated by using the single walled carbon nanotubes as conductive channels. Both metallic and semiconducting behaviors have been demonstrated for these nanotubes. For the semiconducting ones, they are found to be ambipolar transistors. Furthermore, vacuum triodes based on these nanotubes have been made, showing effective switching of the field emission current by using a gate electrode.
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