| 研究課題/領域番号 |
25820373
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| 研究種目 |
若手研究(B)
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| 研究機関 | 東京学芸大学 |
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研究代表者 |
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| 研究期間 (年度) |
2013-04-01 – 2015-03-31
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| キーワード | Electrodeposition / X-ray reflectivity / Silicon / Copper / 表面・界面物性 |
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| 研究概要 |
In fiscal year 2013, the electrochemical growth of copper thin films on silicon was investigated with in-situ X-ray scattering methods under different growth conditions. Changes in the X-ray reflectivity during copper deposition could be observed in-situ as planned. The influence of the applied potential on the growth was investigated for different conditions. The results are currently being analyzed in detail. The observation of X-ray diffraction peaks from the copper film was also attempted, but did not yet succeed. This indicates that the grown films did not have an epitaxial relationship with the silicon substrate.
With regard to improving the experimental apparatus, the setup for observing X-ray reflectivity and X-ray diffraction simultaneously was tested. The influence of the X-ray irradiation on the copper growth was investigated as well. It was found that for high X-ray intensities, Cu growth was significantly reduced. The X-ray intensity was reduced to a level for which the influence on the growth was negligible, but in-situ observations with a reasonable time resolution were still possible.
A new electrochemical cell was designed and built. The new cell has a flat counter electrode mesh, which improves the uniformity of deposition over the whole sample area. It also has an improved air tightness and is easier to clean.
In addition to the growth of copper films on silicon, silicon oxide growth on silicon was also investigated with in-situ X-ray reflectivity. Clear interference fringes due to the growth of the silicon oxide film were observed.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
3: やや遅れている
理由
The research is slightly delayed with regard to the research plan, because the principal investigator moved to a different research institution in April 2013 and new facilities needed for the research had to be set up. This delay concerns mainly the investigations using conventional electrochemical methods. The main object of the current research, the use of in-situ X-ray scattering to observe electrochemical growth in-situ, is also affected to some extent, because the experiments could not be prepared as planned. Overall, however, the goals of this research project are expected to be achieved.
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| 今後の研究の推進方策 |
The main research goals for fiscal year 2014 are further investigation of electrochemical growth of copper thin films at room temperature and investigation of growth at different temperatures.
In the first half of fiscal year 2014, the investigation of electrochemical growth of copper thin films at room temperature will be continued. In addition to observing the growth at different applied potentials, the possibility to study the influence of additives on the growth will be investigated. The simultaneous observation of X-ray reflectivity and diffraction during growth will also be attempted. This will provide information both on the overall film thickness and roughness, and on the size and orientation of crystallites in the film.
Concurrently, preparations will be made for studying the growth of copper films at different temperatures. An in-situ electrochemical cell that allows control of the sample temperature will be designed and constructed. Ex-situ experiments at different temperatures will also be conducted in preparation for the experiments using X-ray scattering.
In the second half of fiscal year 2014, the variable-temperature electrochemical cell will be used to investigate the copper growth at different temperatures with time-resolved X-ray scattering. For selected growth conditions determined in the room-temperature experiments, in-situ observations with X-ray reflectivity and diffraction will be used to clarify the influence of temperature on the growth process.
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| 次年度の研究費の使用計画 |
Travel expenses originally planned were payed by a different budget. In addition, the amount of consumerables could be reduced to some extent.
The amount will be used for travel expenses in fiscal 2014, as well as for consumables like chemicals.
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