• 研究課題をさがす
  • 研究者をさがす
  • KAKENの使い方
  1. 課題ページに戻る

2014 年度 実施状況報告書

Electrodeposition of copper on silicon studied with in-situ X-ray scattering

研究課題

研究課題/領域番号 25820373
研究機関東京学芸大学

研究代表者

VOEGELI Wolfgang  東京学芸大学, 教育学部, 助教 (90624924)

研究期間 (年度) 2013-04-01 – 2016-03-31
キーワードElectrodeposition / X-ray reflectivity / Silicon / Copper / 表面・界面物性
研究実績の概要

In fiscal year 2014, research was focused on the investigation of the electrochemical growth of copper thin films on silicon under different growth conditions and the anodic oxidation of silicon under different potentials. For both samples, the evolution of the thin film during growth was observed in-situ using the simultaneous multiple angle-wavelength X-ray reflectometer at beamline NE7A of the Photon Factory Advanced Ring. For both samples, changes in the X-ray reflectivity during growth could be observed.
In the case of the copper deposition, films were found to be rough under all investigated growth conditions. The incident X-rays significantly affect the growth, reducing the growth rate. Growth was therefore only possible at comparatively high overpotentials. This problem has to be investigated further.
The growth of silicon oxide thin films during the anodic oxidation of silicon was investigated as well. In this case, the incident X-rays also affected the growth at higher intensities, but only little at lower intensities. Flat films showing clear interference fringes in the X-ray reflectivity could be observed. The X-ray reflectivity was analyzed to show the evolution of the film and interface thickness, roughness and density.
The new electrochemical cell built in fiscal year 2013 was tested and proved to allow more uniform growth and an easier handling.

現在までの達成度 (区分)
現在までの達成度 (区分)

4: 遅れている

理由

The in-situ investigation of the growth of copper thin films with X-ray reflectivity was conducted, but growth of flat thin films was more difficult than expected. The research was delayed, because the reduction of the operating time of the PF-AR ring led to a reduction of the beamtime available for this research.
The investigation of the anodic growth of silicon oxide on silicon, on the other hand, gave good results.
The design and fabrication of the variable-temperature electrochemical cell planned for fiscal year 2014 was delayed, because the principal investigator moved to a different institution in fiscal year 2013 and facilities for conducting experiments had to be secured first.

今後の研究の推進方策

In fiscal year 2015, the electrochemical cell for variable-temperature measurements will be fabricated and used for investigating the growth at different temperatures.
In addition, experiments at room temperature will be continued for both the growth of copper films and silicon oxide films on silicon. In both cases, care will be taken to avoid suppression of the growth by the incident X-rays. In the case of the former, it will be investigated, whether the influence of additives on the growth can be studied. In the case of the latter, it will be attempted to observe the diffraction peaks due to possible crystalline interface layers.

次年度使用額が生じた理由

The fabrication of the temperature-variable electrochemical sample cell planned for the fiscal year 2014 was delayed. The amount allocated for this sample cell was therefore unused.

次年度使用額の使用計画

The amount will be used in fiscal year 2015 for the fabrication of the temperature-variable electrochemical sample cell. In addition, it will be used for consumables and travel costs related to the research.

  • 研究成果

    (6件)

すべて 2015 2014

すべて 学会発表 (6件)

  • [学会発表] A method for quick measurement of the surface X-ray diffraction profile2015

    • 著者名/発表者名
      Voegeli Wolfgang、白澤徹郎、荒川悦雄、亀沢知夏、岩見隆太郎、松下正
    • 学会等名
      日本物理学会第70回年次大会
    • 発表場所
      早稲田大学 早稲田キャンパス
    • 年月日
      2015-03-24 – 2015-03-24
  • [学会発表] Observation of oxide growth during anodic oxidation of silicon by time-resolved X-ray reflectivity2015

    • 著者名/発表者名
      W. Voegeli, E. Arakawa, C. Kamezawa, R. Iwami, T. Shirasawa, T. Matsushita
    • 学会等名
      日本放射光学会年会
    • 発表場所
      立命館大学びわこ・くさつキャンパス
    • 年月日
      2015-01-11 – 2015-01-11
  • [学会発表] In-situ X-ray reflectivity observation of oxide growth during anodic oxidation of Si2014

    • 著者名/発表者名
      W. Voegeli, E. Arakawa, C. Kamezawa, R. Iwami, T. Shirasawa, T. Matsushita
    • 学会等名
      The 7th International Symposium on Surface Science
    • 発表場所
      島根県立産業交流会館(くにびきメッセ)
    • 年月日
      2014-11-03 – 2014-11-03
  • [学会発表] その場X線反射率測定による薄膜成長の観察2014

    • 著者名/発表者名
      Voegeli Wolfgang、荒川悦雄、亀沢知夏、岩見隆太郎、白澤徹郎、松下正
    • 学会等名
      2014年電気化学秋季大会
    • 発表場所
      北海道大学高等教育推進機構
    • 年月日
      2014-09-27 – 2014-09-27
  • [学会発表] X線反射率による電気化学的薄膜成長のその場観察2014

    • 著者名/発表者名
      Voegeli Wolfgang、荒川悦雄、亀沢知夏、岩見隆太郎、白澤徹郎、松下正
    • 学会等名
      日本物理学会2014年秋季大会
    • 発表場所
      中部大学春日井キャンパス
    • 年月日
      2014-09-07 – 2014-09-07
  • [学会発表] Electrochemical thin-film growth investigated by time-resolved X-ray reflectivity2014

    • 著者名/発表者名
      W. Voegeli, E. Arakawa, C. Kamezawa, R. Iwami, T. Shirasawa, T. Matsushita
    • 学会等名
      The 13th Surface X-ray and Neutron Scattering conference
    • 発表場所
      ドイツ・ハンブルク
    • 年月日
      2014-09-07 – 2014-09-07

URL: 

公開日: 2016-06-01  

サービス概要 検索マニュアル よくある質問 お知らせ 利用規程 科研費による研究の帰属

Powered by NII kakenhi