研究課題/領域番号 |
26610073
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研究機関 | 国立天文台 |
研究代表者 |
フラミニオ ラファエレ 国立天文台, 重力波プロジェクト推進室, 特任教授 (10723108)
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研究期間 (年度) |
2014-04-01 – 2016-03-31
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キーワード | Coatings / Crystals / Absorption / Scattering |
研究実績の概要 |
As originally planned we investigated different solutions to develop low losses mirrors based on crystalline coatings. The following materials were considered: AlAs/GaAs grown on GaAs wafers, AlP/GaP grown on Silicon wafers and GaN/AllInN grown on sapphire. In the end we decided to develop AlAs/GaAs. A meeting to discuss the plan for the coatings growth and characterization was held at the Laboratoire des Materiaux Avances in Lyon (France). We decided to skip the development of monolayers and to move directly to the development of multilayers made of AlAs/GaAs. To this purpose we purchases a set of GaAs wafers. Two multilayer coatings were grown on GaAs wafers at Laboratoire de Photonique et de Nanostructures in Paris (France). They were characterized both in term of optical absorption and optical scattering. The results are promising even if some point defects have been detected and are being investigated. For the optical characterization we collaborated with the Laboratoire des Materiaux Avances in Lyon as originally planned. To prepare the second step which is the transfer of the crystalline coatings on the final substrate we also started to study a possible bonding at room temperature with the Department of Engineering of the University of Tokyo.
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現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
No special reasons, just progressing as best as possible given the constraints and the results.
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今後の研究の推進方策 |
The plan for the second year consists in transferring the coatings developed during the first year on the final substrates in silica and/or sapphire. The substrate in silica were already purchased during the first year using another budget. The substrates in sapphire will be bought during the second year. The final components will be characterized in terms of optical absorption and scattering.
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次年度使用額が生じた理由 |
The initial plan was to have the growth of the coating on the GaAs wafers and their transfer on the final substrates (silica and sapphires) done by the same company in Japan. It finally turned out that the overall cost was too large compared to the allocated budget. We thus changed our plan and separated the process into two different steps: the growth of the coating on the wafers and the transfer to the final substrate. The first step was done at a minimal cost thanks to a collaboration with the Laboratoire de Photonique et de Nanostructures in Paris (France). Some funds allocated for the first year were thus carried over to the second year to accomplish the second step.
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次年度使用額の使用計画 |
The plan is to use these funds to pay some of the costs required to transfer the coatings on the silica and sapphire substrates.
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