| 研究実績の概要 |
We completed a detailed study of the weak anti-localization in Ge/Si nanowires using dual top and bottom gates and thin Hafnium dielectric. Results indicate a three fold electrical tunability of the strength of spin orbit interaction with a large Rashba coefficient, providing strong evidence for an electric dipole coupled Rashba spin-orbit interaction. We produced Ge/Si double quantum dot devices coupled to microwave cavities, with hBN as a gate dielectric, to study spin-photon coupling and succeed in the dispersive readout of charge states. We developed a new method to measure Josephson emission from voltage biased junctions to search for Majorana modes. This techniques we applied successfully to the HgTe based quantum spin hall insulator system [Phys. Rev. X, 7, 021011, 2017].
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