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2014 年度 実施状況報告書

電子線誘起電流法によってSrTiO3結晶中の転位の電気特性評価

研究課題

研究課題/領域番号 26820120
研究機関独立行政法人物質・材料研究機構

研究代表者

陳 君  独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス拠点, MANA研究員 (90537739)

研究期間 (年度) 2014-04-01 – 2016-03-31
キーワードSrTiO3 / Dislocations / EBIC / TEM
研究実績の概要

In the first fiscal year of this project, the electrical activities of dislocations in Nb-doped SrTiO3 and the role of dislocations in the resistance switching in Pt/SrTiO3 Schottky have been clarified. The electrical activities of dislocations were investigated by EBIC, and the characters of dislocations were studied by chemical etching and TEM. Dislocations exhibited dark EBIC contrast suggesting the presence of recombination centers. When changing the bias or accelerating voltage, bright EBIC contrast was observed around certain dislocations. On the other hand, dislocations of screw, edge, and mixed types co-existed and most dislocations have Burgers vectors of <110> type. It is considered that dislocations in SrTiO3 are associated with different defect levels depending on their characters. These data suggested that not all the dislocations contribute to the switching phenomenon. The active dislocations for resistance switching were discussed. For example, dislocations with line vector of [111] tend to have shallow levels and relate to the resistance switching.

現在までの達成度 (区分)
現在までの達成度 (区分)

1: 当初の計画以上に進展している

理由

During the first fiscal year, we have achieved 70% of the goal of this research project. We succeeded to fabricate the Pt/SrTiO3/Al Schottky structures with different sizes by e-beam deposition and performed multi-dimensional probing EBIC observations. It is found that not the density of dislocation, but the character of dislocation affects the resistance switching. The structures of dislocations were studied using chemical etching and TEM. The correlation between the electrical properties and structure properties has been clarified. We have published these results recently in Appl. Phys. Lett., and presented in Japanese Applied Physics Meeting and the 12th International BIAMS Conference.

今後の研究の推進方策

Actually, there are many interesting points need detail study and discussion. For the future study, there are several open questions such as the effect of doping concentration, crystal orientation, heat treatment, and e-beam irradiation. To solve these questions, we will continue the future study on these points. Furthermore, as demonstrated in this project, EBIC is a novel method for this topic and it is expected to be applied for the other oxide materials with similar resistance switching properties.

  • 研究成果

    (4件)

すべて 2015 2014

すべて 雑誌論文 (1件) (うち査読あり 1件、 オープンアクセス 1件、 謝辞記載あり 1件) 学会発表 (3件)

  • [雑誌論文] Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy2015

    • 著者名/発表者名
      J. Chen, T. Sekiguchi, J. Y. Li, S. Ito, W. Yi, A. Ogura
    • 雑誌名

      Applied Physics Letters

      巻: 106 ページ: 102109-1-4

    • DOI

      10.1063/1.4915298

    • 査読あり / オープンアクセス / 謝辞記載あり
  • [学会発表] SrTiO3電気抵抗スイッチングに関する転位の影響2015

    • 著者名/発表者名
      陳君、李建永、伊藤俊、関口隆史
    • 学会等名
      第62回応用物理学会春季学術講演会
    • 発表場所
      東海大学湘南キャンパス,神奈川県平塚市,日本
    • 年月日
      2015-03-11 – 2015-03-14
  • [学会発表] Title 電子線誘起電流法によるSrTiO3結晶中の転位の電気特性評価2014

    • 著者名/発表者名
      陳君、李建永、Wei Yi、小椋厚志、関口隆史
    • 学会等名
      第75回応用物理学会秋季学術講演会
    • 発表場所
      北海道大学札幌キャンパス,札幌,日本
    • 年月日
      2014-09-17 – 2014-09-20
  • [学会発表] Electron-beam-induced current study of dislocation related defects in (111) SrTiO3 single crystals2014

    • 著者名/発表者名
      J. Chen, J. Y. Li, T. Sekiguchi
    • 学会等名
      The 12th BIAMS Conference
    • 発表場所
      NAMIKI site, NIMS,Tsukuba,Japan
    • 年月日
      2014-06-22 – 2014-06-26

URL: 

公開日: 2016-06-01  

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