機能性薄膜の形成技術の展開と応用

1989 年度 実績報告書

• 研究課題/領域番号: 63302021
• 研究機関: 名古屋大学
• 研究代表者: 安田 幸夫 名古屋大学, 工学部, 教授 (60126951)
• 研究分担者: 米津 宏雄 豊橋技術科学大学, 工学部, 教授 (90191668) ; 西永 頌 東京大学, 工学部, 教授 (10023128) ; 美浜 和弘 名古屋大学, 工学部, 教授 (50023007) ; 内山 晋 名古屋大学, 工学部, 教授 (40023022) ; 赤崎 勇 名古屋大学, 工学部, 教授 (20144115)
• キーワード: 機能性薄膜 / 薄膜形成技術

研究概要

本年度は、前年度において学際的に検討を行なった結果に基づき、機能性薄膜の形成技術をより一層発展させるとともに、新しい薄膜材料の開発や形成技術の他分野への応用を目的として研究を行なった。具体的には、平成元年度においては各研究分担者相互の連携を深めるとともにその集約として研究会を11月と12月の2回開催し、薄膜形成技術とその成長機構、新しい機能性薄膜の特性等について活発な議論・討論を行なった。各研究分担者の材料分野は、シリコン系半導体、化合物半導体、絶縁物、高温超伝導体、ダイヤモンド、アモルファス材料、有機高分子材料等の多岐にわたった。また、形成方法についても、真空蒸着法、スパッタリング法、分子線エピタキシャル法、気相成長法、液相成長法、各種励起法(高周波、直流放電、光、イオン等)などそれぞれの材料に対して種々の方法が検討された。
本年度の学際的交流により発展した新しい芽として、ガスソ-ス分子線エピタキシャル法による半導体薄膜の成長、高温超伝導体へのイオンプレ-ティング法の応用、金属複合膜の開発等がある。特に、半導体薄膜を中心として、形成技術は原子層レベルの成長制御が可能な水準に達し、学問的には薄膜の物性から界面・表面で発現する物性へと発展をみせた。すなわち、薄膜形成技術の進歩により、材料制術と材料設計はサイズ効果、量子力学的効果及び界面・表面物性をふまえた新しい段階へと進展しつつあり、本研究においてもこのことに関する研究が多数行なわれた。
本研究により、薄膜形成技術と材料の関係をマトリクスの形で把握することができた。これにより、今後形成技術を総合的かつ有効に活用することができると考えられる。特に、マトリクスの空白部分には、新しい芽を潜在させている可能性があり、今後の検討が重要と考えられる。

研究成果

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• [文献書誌] K.Suzuki,A.Sawabe,H.Yasuda and T.Inuzuka: "Growth of diamond thin films by dc plasma chemical vapor deposition" Appl.Phys.Lett.50. 728-729 (1987)
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• [文献書誌] K.Suzuki,A.Sawabe,and T.Inuzuka: "Characterizations of the dc discharge plasma during chemical vapor deposition for diamond growth" Appl.Phys.Lett.53. 1818-1819 (1988)
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• [文献書誌] T.Ohmi,T.Ichikawa,T.Shibata and H.Iwabuchi: "Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process" Appl.Phys.Lett.54. 523-525 (1989)
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• [文献書誌] T.Ohmi,K.Hashimoto,M.Morita and T.Shibata: "in Situ-Deped Epitaxial Silicon Film Growth At 250℃ By An Ultra-Clean Low-Energy Bias Sputtering" 1989 IEDM Tech.Dig.53-56 (1989)
• [文献書誌] M.Morita,T.Ohmi,E.Hasegawa,M.Kawakami,and K.Suma: "NATIVE LAYER-FREE OXIDATION FOR VERY THIN GATE OXIDES" 1989 VLSI Tech.Symposium,Dig.Tech.Papers. 75-76 (1989)
• [文献書誌] T.Saito,T.Ohmi,T.Shibata,M.Otsuki,and T.Nitta: "Thermal Stability Studies on Copper Thin Films Formed by a Low-Kinetic-Energy Particle Process" 21st Conf.Solid State Devices and Materials. 25-28 (1989)
• [文献書誌] A.Kinbara and S.Baba: "Recent Trends of the Study of Sputtering Process" lst Korea-Japan Plasma Applied Science Symposium Seoul,May 2-4. 1-7 (1989)
• [文献書誌] A.Kinbara,S.Baba,A.Kikuchi,T.Kajiwara,and K.Watanabe: "ADHESION MEASUREMENT OF THIN FILMS ON GLASS SUBSTRATES" Thin Solid Films. 171. 93-98 (1989)
• [文献書誌] S.Baba,N.Kurosaki,and A.Kinbara: "ISLAND STRUCTURE AND FRICTIONAL PROPERTIES OF SPUTTERED LEAD THIN FILMS" Sino-Japanese Symposium on Dry Processing for Functional Surface Modification. 74-79
• [文献書誌] T.Kaneko,H.Asahi,Y.Okuno,and S.Gonda: "MOMBE(METALORGANIC MOLECULAR BEAM EPITAXY)GROWTH OF InGaSb ON GaSb" J.Crystal Growth. 95. 158-162 (1989)
• [文献書誌] T.Kaneko,H.Asahi,Y.Okuno,T.W.Kang,and S.Gonda: "Observations on RHEED intensity oscillations during the growth of GaSb and InAs by MOMBE" Second Intl.Conf.on Chemical Beam Epitaxy and Related Growth Techniques(Including MOMBE,GSMBE and LP-MOVPE)MP2 Houston December. 1989
• [文献書誌] 金子忠昭,奥野泰利,朝日一,権田俊一: "InGaAlAsSb系のMOMBE成長" 応用物理学会、応用電子物性分科会研究報告. 428. 19-24 (1989)
• [文献書誌] T.Hattori,K.Takase,H.Yamagishi,R.Sugino,Y.Nara and T.Ito: "Chemical Structures of Native Oxides Formed during Wet Chemical Treatments" Jpn.J.Appl.Phys.28. L296-L298 (1989)
• [文献書誌] N.Miyata,K.Moriki,M.Fujisawa,M.Hirayama,T.Matsukawa and T.Hattori: "Optical Absorption in Ultrathin Silicon Oxide Film" Jpn.J.Appl.Phys.28. L2072-L2074 (1989)
• [文献書誌] 川原田洋,鈴木準一,馬京昇,平木昭夫: "磁場制御による低圧マイクロ波プラズマでのダイヤモンド合成" 応用物理. 57. 1912-1918 (1988)
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• [文献書誌] J.Wei,H.Kawarada,J.Suzuki,K.Yanagihara,K.Numata,and A.Hiraki: "EFFECTS OF PLASMA PARAMETER ON DIAMOND DEPOSITION AT LOWER PRESSURE USING MAGNETO-MICROWAVE PLASMA CVD" in Proc.of lst Int.Symp.on Diamond and Diamond-Like Film.Electrochem.Soc.393-403 (1989)
• [文献書誌] H.Kawarada,K.Nishimura,T.Ito,J.Suzuki,K.S.Mar,Y.Yokota,and A.Hiraki: "Blue and Green Cathodoluminescence of Synthesized Diamond Films Formed by Plasma-Assisted Chemical Vapour Deposition" Jap.J.Appl.Phys.27. L683-L686 (1988)
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• [文献書誌] H.Kawarada,Y.Yokota,Y.Mori,K.Nishimura,and A.Hiraki: "Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition" J.Appl.Phys.67. (1990)
• [文献書誌] H.Kawarada,J.S.Ma,T.Yonehara,and A.Hiraki: "SELECTIVE NUCLEATION BASED EPITAXY OF CVD DIAMOND AND ITS APPLICABILITY TO SEMICONDUCTING DEVICE" Mat.Res.Symp.Proc.(1990)
• [文献書誌] T.Tanaka,K.Deguchi,S.Miyazaki,and M.Hirose: "Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD" Extended Abstracts of the 20th Conf.on Solid State Devices and Meterials. 61-64 (1988)
• [文献書誌] T.Tanaka,K.Deguchi,S.Miyazaki,and M.Hirose: "Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD" Jpn.J.Appl.Phys.27. L2149-L2151 (1988)
• [文献書誌] T.Tanaka,T.Fukuda,Y.Nagasawa,S.Miyazaki,and M.Hirose: "Atomic Laser Growth of Silicon by Excimer Laser Induced Cryogenic CVD" Extended Abstracts of the 21th Conf.on Solid State Devices and Meterials. 53-56 (1989)
• [文献書誌] T.Tanaka,T.Fukuda,Y.Nagasawa,S.Miyazaki,and M.Hirose: "ATOMIC LASER GROWTH MECHANISM OF SILICON BY EXCIMER LASER INDUCED CRYOGENIC CVD" Proc.of Dry Process Symposiunm. 103-107 (1989)
• [文献書誌] K.Nakamura,T.Koyanagi,K.Yamano,and K.Matsubara: "Electro-optical effects of Cd_<1-x>Mn_xTe films prepared by ionized-cluster beams" J.Appl.Phys.65. 1381-1383 (1989)
• [文献書誌] T.Koyanagi,K.Yamano,T.Sota,K.Nakamura,and K.Matsubara: "Electric Field Effects on Faraday Rotation of Cd_<1-x>Mn_xTe Films Prepared by IonizedCluster Beams" Jpn.J.Appl.Phys.28. L669-L671 (1989)
• [文献書誌] 山野浩司,曽田哲夫,小柳剛,中村公夫,松原覚衛: "クラスタ-・イオンビ-ム法によるCd_<1-x>Mn_xTe薄膜のファラデ-回転に及ぼす電界効果" 日本応用磁気学会誌. 13. 175-178 (1989)
• [文献書誌] 小柳剛,中村公夫,山野浩司,松原覚衛: "Cd_<1-x>Mn_xTe薄膜の励起子による磁気光学効果" 日本応用磁気学会誌. 12. 187-192 (1988)
• [文献書誌] T.Koyanagi,K.Nakamura,K.Yamano,and K.Matsubara: "Faraday Effect Due to Excitons in Cd_<1-x>Mn_xTe Films" Tech.Rept.Yamaguchi Univ.4. 183-194 (1988)
• [文献書誌] T.Koyanagi,K.Nakamura,K.Yamano,and K.Matsubara: "Faraday Effects Due to Excitons in Cd_<1-x>Mn_xTe Films" IEEE Trans.J.Magn.Jpn.4. 228-236 (1989)
• [文献書誌] 小柳剛,山野浩司,曽田哲夫,松原覚衛: "Cd_<1-x>Mn_xTe薄膜の磁気光学効果の温度特性" 日本応用磁気学会誌. 13. 171-174 (1989)
• [文献書誌] T.Koyanagi,H.Anno,T.Sota,K.Yamano,and K.Matsubara: "PREPARATION OF Cd_<1-x>Mn_xTe MULTILAYERED FILMS ON GaAs PREPARED BY THE ICB TECHNIQUE" Proc.12th Symp.on Ion Sources and Ion-Assisted Technology. 331-334 (1989)
• [文献書誌] K.Mihama and N.Tanaka: "Nm-sized crystallites embedded in single crystalline films of magnesium oxide" Z.Phys.D. 12. 157-160 (1989)
• [文献書誌] K.Kimoto,N.Tanaka,and K.Mihama: "Observations of Gold Atomic Clusters in Magnesium Oxide Films unber Off-Bragg Conditions" J.Elec.Microsc.38. 165-171 (1989)
• [文献書誌] N.Tanaka,M.Nagao,F.Yoshizaki,and K.Mihama: "Structural Study of Nanometer-Sized Iron Crystallites in Single Crystalline Iron-MgO Composite Films" J.Elec.Microsc.and Tech.12. 272-280 (1989)
• [文献書誌] H.Yamada,M.Nakamura,T.Tashiro,S.Morita,and S.Hattori: "LINEAR CHAIN POLYMER FORMATION BY PLASMA POLYMERIZATION AND APPLICATION" Proc.9th Int.Sym.on Plasma Chem.Pugunochiuso(Italy)Sep.4-8. 1116-1121 (1989)
• [文献書誌] H.Oniyama,S.Yamaga,A.Yoshikawa,and H.Kasai: "METALORGANIC MOLECULAR BEAM EPITAXY OF ZnSe FILMS USING DIMETHYLZINC AND HYDROGEN SELENIDE" J.Crystal Growth.93. 679-685 (1988)
• [文献書誌] A.Yoshikawa,H.Oniyama,H.Yasuda,S.Yamaga,and H.Kasai: "GROWTH KINETICS IN MOMBE OF ZnSe USING DIMETHYLZINC AND HYDROGEN SELENIDE AS REACTANTS" J.Crystal Growth.94. 69-74 (1989)
• [文献書誌] A.Yoshikawa,H.Oniyama,S.Yamaga,and H.Kasai: "A STUDY OF GROWTH MECHANISM OF ZnS AND ZnSe IN MOMBE USING DIMETHYLZING AND CHALCOGEN HYDRIDES AS REACTANTS" J.Crystal Growth.95. 572-579 (1989)
• [文献書誌] A.Yoshikawa,H.Okamoto,H.Yasuda,S.Yamaga,and H.Kasai: "‘MBE-LIKE'AND‘CVD-LIKE'ATOMIC LAYER EPITAXY OF ZnSe IN MOMBE SYSTEM" J.Crystal Growth.(1989)
• [文献書誌] H.Oniyama,S.Yamaga,and A.Yoshikawa: "Growth of Lattice-Metched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam Epitaxy" Jpn.J.Appl.Phys.28. L2137-L2140 (1989)
• [文献書誌] M.Tsuji,Y.Takano,T.Torihata,Y.Kanaya,K.Pak,and H.Yonezu: "MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH QUALITY GaAs LAYER DIRECTLY ON GaP SUBSTRATE" J.Crystal Growth.95. 405-409 (1989)
• [文献書誌] Y.Iimura,K.Nagata,Y.Aoyagi,and S.Namba: "SURFACE SEGREGATION OF INDIUM DURING GROWTH OF InGaAs IN CHEMICAL BEAM EPITAXY" submitted in J.Crystal Growth.
• [文献書誌] S.Iwai,T.Meguro,A.Doi,Y.Aoyagi,and S.Namba: "MONOLAYER GROWTH AND DIRECT WRITING OF GaAs BY PULSED LASER METALORGANIC VAPOR PHASE EPITAXY" Thin Solid Films. 163. 405-408 (1988)