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[文献書誌] H.Hasegawa and K.Iizuka: "Effects of Carries on Propergation of Electromagnetic Waves Along Planar Waveguides Formed on Semiconductros" Proc.of Progress in Electromagnetic Research Symposium(PIERS). 72-74 (1989)
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[文献書誌] M.Akazawa,H.Hasegawa and E.Ohue: "In_<0.53>Ga_<0.47>As MISFET s having an ultrathin MBE Si interface control layer and photo-CVD SiO_2 insulator" Extended Abstracts of the 21st Conference on Solid State Devices and Materials. 229-232 (1989)
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[文献書誌] H.Hasegawa,M.Akazawa,H.Ishii and k.Matsuzaki: "Control of compound semiconductor-insulator interfaces by an ultrathin molecular-beam epitaxy Si layer" J.Vac.Sci.Technol.B. 7. 870-878 (1989)
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[文献書誌] K.Iizuka,J.Akasaka,T.Tsubata and H.Hasegawa: "Surface recombination in InGaAs photoconductive detertors and its reduction by a novel passivation scheme using an MBE Si layer" Proc.of 16th Int.Symp.on GaAs and Related Compounds(Sept.1989,to be published). (1989)
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[文献書誌] 長谷川英機: "III-V族化合物半導体の表面・界面" 表面科学. 10. 838-849 (1989)
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[文献書誌] M.Akazawa,H.Hasegawa and E.Ohue: "In_<0.53>Ga_<0.47>As MISFETs having an ultrathin MBE Si interface control layer and photo-CVD SiO_2 insulator" Jpn.J.Appl.Phys.28. L2095-L2097 (1989)