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[文献書誌] Y.Yokota,M.Song,H.Hashimoto and M.Awaji: "Surface topography of ion-etched Si wafers studied by electron microscopy" Japanese Journal of Applied Physics. 29. inpress (1990)
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[文献書誌] 横田康広: "断面観察法による半導体界面の評価" 金属. 59. 48-54 (1989)
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[文献書誌] M.Song,Y.Yokota,H.Hashinoto: "Atomic scale morphology of the interface on the crystalline Si covered by an amorphous layer formed by ionetching" Scanning EM89 WEST. inpress (1990)
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[文献書誌] H.Hashimoto,Y.Yokota,M.Song and M.Awaji: "Atomic structure of ion milled surface of Si(100)and(111)observed by a high resolution electron microscope" Proc.3rd.Bejing Conf.and Exhib.on Instrum.Analysis,1989. A93-A94 (1989)
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[文献書誌] Y.Yokota and H.Hashimoto: "Formation process of silicide at Pt-Si(111)interface" proc.46th EMSA meet.484-485 (1988)