2010 Fiscal Year Final Research Report
Reproducible growth technique for GaInNAs and its application to long-wavelength laser diodes
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069008
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Osaka University |
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Principal Investigator |
KONDOW Masahiko Osaka University, 工学研究科, 教授 (90403170)
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| Co-Investigator(Kenkyū-buntansha) |
FUJIWARA Yasufumi 大阪大学, 工学研究科, 教授 (10181421)
MORI Nobuya 大阪大学, 工学研究科, 准教授 (70239614)
MOMOSE Hideki 大阪大学, 低温センター, 助教 (80260636)
ISHIKAWA Fumitaro 大阪大学, 工学研究科, 助教 (60456994)
MORIFUJI Masato 大阪大学, 工学研究科, 助教 (00230144)
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| Project Period (FY) |
2006 – 2010
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| Keywords | GaInNAs / 半導体レーザ / 分子線エピタキシー / フォトルミネッセンス高品質化 / Al混入 |
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| Research Abstract |
We pursuit the reproducible growth of high-quality long-wavelength emitting GaInNAs by molecular beam epitaxy (MBE). Examining the effect of nitrogen introduction and its correlation between impurity incorporation, we find the source species especially Al is unintentionally incorporated into the epitaxial layer followed by the concomitant incorporation of O and C. A model considering gas-phase scattering can explain the phenomena, suggesting that a large amount of N_2 gas causes the scattering of residual Al atoms with an occasional collision resulting in the atoms directed toward the substrate. Hence, the reduction of the sublimated Al beam at the growth period can suppress the incorporation of the unintentional impurities, realizing highly-pure epitaxial layer.
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[Journal Article] Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy2011
Author(s)
F.Ishikawa, S.Fuyuno, K.Higashi, M.Kondow, M.Machida, H.Oji, J.-Y.Son, A.Trampert, K.Umeno, Y.Furukawa, A.Wakahara
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Journal Title
Appl.Phys.Lett. 98
Pages: 121915
Peer Reviewed
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