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2010 Fiscal Year Final Research Report

Watt class high power ultraviolet laser diode

Planned Research

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Project AreaOptoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
Project/Area Number 18069011
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionMeijo University

Principal Investigator

AMANO Hiroshi  Meijo University, 工学研究科, 教授 (60202694)

Co-Investigator(Kenkyū-buntansha) KAMIYAMA Satoshi  名城大学, 理工学部, 教授 (10340291)
IWAYA Motoaki  名城大学, 理工学部, 准教授 (40367735)
Project Period (FY) 2006 – 2010
KeywordsAlN / AlGaN / MOVPE / UV・DUV / LED・LD
Research Abstract

Metalorganic vapor phase epitaxial (MOVPE) system by which AlN and AlGaN can be grown at high temperature was designed and installed. High temperature MOVPE is found to be very effective to grow high-crystalline quality and low residual impurity AlN and AlGaN. By using high temperature MOVPE system, lateral growth technique can be successfully applied to grow low threading dislocation density (TDD) AlN and AlGaN on a sapphire substrate. Multi quantum well (MQW) structures emitting from 230 nm to 345 nm containing different TDD were systematically grown. Internal quantum efficiency (IQE) of these MQW was found to be uniquely dependent on the TDD. UVA laser diode (LD) was fabricated. Injection efficiency and IQE of the UVA LD was characterized. UV/DUV LEDs with external quantum efficiency over 5% were successfully fabricated. High crystalline quality AlN can be grown by close spaced sublimation method with a growth rate as high as 0.6 mm/h.

  • Research Products

    (10 results)

All 2011 2010 2009 2008 2007 2006 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (2 results) Book (1 results) Remarks (1 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method2011

    • Author(s)
      M.Yamakawa, K.Murata, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, M.Azuma
    • Journal Title

      Applied Physics Express 4

      Pages: #045503

    • Peer Reviewed
  • [Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices2008

    • Author(s)
      H.Amano, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
    • Journal Title

      Mater.Sci.Forum 590

      Pages: 175-210

    • Peer Reviewed
  • [Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN2010

    • Author(s)
      H.Amano, M.Yamaguchi, Y.Honda, M.Iwaya, S.Kamiyama, I.Akasaki
    • Organizer
      The 16th International Conference on Crystal Growth(ICCG-16) 招待講演
    • Place of Presentation
      Beijing, China.
    • Year and Date
      20100808-20100813
  • [Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009

    • Author(s)
      H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
    • Organizer
      SIMC-XV 招待講演
    • Place of Presentation
      Vilnius, Lithuania.
    • Year and Date
      2009-06-16
  • [Book] Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga, In)N films on lattice-mismatched substrates Wiley-VCH Verlag GmbH & Co.KGaA(Editor : T.Paskova)2008

    • Author(s)
      H.Amano, T.Kawashima, D.Iida, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
    • Total Pages
      108-118
    • Publisher
      Nitrides with Nonpolar Surfaces
  • [Remarks] ホームページ等

    • URL

      http://kenpro.mynu.jp:8001/Profiles/0065/0006561/profile.html

  • [Patent(Industrial Property Rights)] 自立基板の製造方法、AlN自立基板及びIII族窒化物半導体デバイス2011

    • Inventor(s)
      天野浩、岩谷素顕
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Number
      通常,特願2011-60889
    • Filing Date
      2011-03-18
  • [Patent(Industrial Property Rights)] 窒化アルミニウム単結晶多角柱状体及びその製造方法2007

    • Inventor(s)
      天野浩、金近幸博、東正信
    • Industrial Property Rights Holder
      (株)トクヤマ
    • Industrial Property Number
      通常,特願2007-303311
    • Filing Date
      2007-11-22
  • [Patent(Industrial Property Rights)] 板状の窒化アルミニウム単結晶の製造方法2007

    • Inventor(s)
      天野浩、金近幸博、東正信
    • Industrial Property Rights Holder
      (株)トクヤマ
    • Industrial Property Number
      通常,特願2007-303312
    • Filing Date
      2007-11-22
  • [Patent(Industrial Property Rights)] 窒化化合物半導体基板及び半導体デバイス2006

    • Inventor(s)
      天野浩、吉田冶正、高木康文、桑原正和
    • Industrial Property Rights Holder
      浜松ホトニクス(株)
    • Industrial Property Number
      通常,特願2006-32950
    • Filing Date
      2006-02-09

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Published: 2012-02-13   Modified: 2016-04-21  

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