2017 Fiscal Year Final Research Report
Imaging of particles in high luminosity accelerator experiments
| Project Area | Interdisciplinary research on quantum imaging opened with 3D semiconductor detector |
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| Project/Area Number |
25109006
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| Research Category |
Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | High Energy Accelerator Research Organization |
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Principal Investigator |
Tsuboyama Toru 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 講師 (80188622)
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| Co-Investigator(Kenkyū-buntansha) |
原 和彦 筑波大学, 数理物質系, 准教授 (20218613)
池上 陽一 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 講師 (20222862)
石川 明正 東北大学, 理学研究科, 助教 (40452833)
外川 学 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 准教授 (50455359)
幅 淳二 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 教授 (60180923)
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| Co-Investigator(Renkei-kenkyūsha) |
HANAGAKI Kazunori 高エネルギー加速器研究機構, 素粒子原子核研究所, 教授 (40448072)
TAKUBO Yousuke 高エネルギー加速器研究機構, 素粒子原子核研究所, 助教 (50423124)
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| Research Collaborator |
ONO Shun 高エネルギー加速器研究機構, 素粒子原子核研究所, 研究員 (60603157)
YAMADA Miho 高エネルギー加速器研究機構, 素粒子原子核研究所, 研究員 (60603157)
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| Project Period (FY) |
2013-06-28 – 2018-03-31
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| Keywords | 素粒子物理学実験 / 半導体デバイス / SOI CMOS技術 / ピクセルセンサー / 放射線耐性 / 高位置分解能 / 高時間分解能 / 3次元積層技術 |
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| Outline of Final Research Achievements |
We have developed the monolithic pixel sensors, SOIPIX, for the high-energy accelerator experiments based on the SOI CMOS technology. After the basic studies, the FPIX and SOFIST sensors were produced and their performances were evaluated as follows:
(a) With a 120 GeV proton beam at FNAL, US, (1) the world highest spatial resolution of 0.7 um was obtained for the pixel size of 8 um x 8 um, FPIX2. (2) With the SOFIST1 and SOFIST2 sensors, designed for studying the spatial resolution and hit-time resolution, we obtained the position resolution of 1.7 um for the 20um x 20um pixel size and a hit time resolution of 2usec, respectively. (b) The FPIX3 pixel sensor, adopting the double-SOI and modified LDD technologies, responded to the IR light even after 1 MGy irradiation.
Based on these results, we produced an SOI pixel sensor with the 3D integration technology. The chip will satisfy the requirements of the ILC vertex detector. The study of this sensor will be continued.
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| Free Research Field |
素粒子物理学実験
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