1992 Fiscal Year Final Research Report Summary
Super-Parallel Analog Sensor Device for 3D Imaging
| Project/Area Number |
03555084
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
計測・制御工学
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| Research Institution | Osaka University |
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Principal Investigator |
INOKUCHI Seiji Osaka Univ., Fac. of Eng.Sci., Professor, 基礎工学部, 教授 (90029463)
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| Co-Investigator(Kenkyū-buntansha) |
OKUYAMA Masanori Osaka Univ., Fac. of Eng.Sci., Assoc. Prof., 基礎工学部, 教授 (60029569)
KATO Hirokazu Osaka Univ., Fac. of Eng.Sci., Research Assoc., 基礎工学部, 助手 (70221182)
SATO Kosuge Osaka Univ., Fac. of Eng. ci., Lecturer, 基礎工学部, 助手 (90187188)
NUMATA Takuhisa Osaka Univ., Fac. of Eng.Sci., Assoc. Prof., 基礎工学部, 助教授 (80135673)
千原 国宏 奈良先端科学技術大学院大学, 情報科学専攻科, 教授 (80029561)
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| Project Period (FY) |
1991 – 1992
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| Keywords | 3D Measurement / Range Image / Range Measurement / Range Finder / Range Sensor / Image Sensor / Chip Sensor / Intelligent Sensor |
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| Research Abstract |
According to the research proposal and the financial proposal, a basic design for implementing a silicon chip sensor which measures three dimensional images in realtime for image recognition of 3D objects is established. A basic circuit design is confirmed by using a analog-digital circuit simulator, Miscosim PSpice on Apple MacIIci bought by this aid, and by building a prototype with discrete electronic parts. The prototype sensor system consists of
A) 10mW 670nm laser diode
B) galvan mirror (General Scanning)
C) 16*16 photo diode array (Hamamatsu Photonics)
D) Several CMOS DIP ICs
E) personal computer (NEC PC8901), and
F) special interface card.
The system has 16*8 pixels because each pixel uses a pair of photo diodes.
The following results are obtained from the project.
1) A pair of photo diodes can be cancel several ill effects, such as temperature-dark current effect, sensibility variation among photo diode.
2) An experimental circuit design can consists of CMOS inverters, analog switches and diodes. It shows that the circuit can be fabricated in normal digital CMOS process, two polysilicon and two metal.
3) The prototype sensor can measure more than 120 3D-images in a second.
Finally, the project can show a feasibility of very high-speed range imaging silicon chip-sensor. The feasibility makes an important influence for the field computer vision, roboto vision and automatic visual inspection. The obtained technical ideas must be refered for building same kind of practical sensors.
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