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1994 Fiscal Year Final Research Report Summary

High-Efficiency and Low-Cost Solar Cells of a New Type, Having Semiconductors Modified with Ultrafine Metal Particles

Research Project

Project/Area Number 05453191
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Science education
Research InstitutionOsaka University

Principal Investigator

NAKATO Yoshihiro  Osaka University, Faculty of Engineering Science, Department of Chemistry, Professor, 基礎工学部, 教授 (70029502)

Co-Investigator(Kenkyū-buntansha) YAE Shinji  Osaka University, Faculty of Engineering Science, Department of Chemistry, Resea, 基礎工学部, 助手 (00239716)
KOBAYASHI Hikaru  Osaka University, Faculty of Engineering Science, Department of Chemistry, Assoc, 基礎工学部, 助教授 (90195800)
Project Period (FY) 1993 – 1994
KeywordsSilicon / Langmuir-Blogdett layr / Porous silicon / Transparent conductive oxide / Photoelectrochemistry / Hole diffusion length / Minority carrier diode
Research Abstract

Photoelectrochemical and solid-state solar cells of a new type, prepared by use of n-Si wafers modified with ultrafine metal particles, have been studied with an aim to improving the characteristics. A Langmuir-Blodgett layr of ultrafine platinum (Pt) particles on a water surface was transferred onto an n-Si wafer and, by this method, the mutual separation of the Pt particles on n-Si was controlled on a nanometer scale, From quantitative experimental studies on the dependences of the open-circuit photovoltage (V_<OC>) on the Pt-particle density and the cell temperature as well as that on the hole diffusion length of n-Si modified with the Pt particles, we have revealed that the n-Si modified with the Pt particles at a small density acts as an ideal minority-carrier diode at room temperature and generates a very high V_<OC>. We also attempted to use porous n-Si as a method to deposit ultrafine Pt islands and succeeded in obtaining a fairly high V_<OC> of 0.59V.Furthermore, we mede detailed studies on the solid-state solar cells prepared by the vacuum deposition of an indium-tin-oxide (ITO) layr on the Pt-particle modified n-Si, and have clarified that the direct deposition of an ITO layr on the Pt-modified n-Si causes many defects (surface recombination centers) near the Si surface, leading to small V_<OC>'s, but the pre-deposition of a thin copper-phthalocyanine layr before the ITO deposition suppresses the formation of such defects, incresing V_<OC> to 0.58V.We also studied "ITO/Si-oxide/Si" solar cells to clarify the structure and properties of the thin films and interfaces.

  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] R.Hinogami: "Efficient Photoelectrochemical Reduction of Carbon Dioxide on a p-Type Silicon (p-Si)Electrode Modified with very Small Copper Particles." Chem.Lett.1725-1728 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kobayashi: "Improvement in Hydrogen Photoevolution Efficiency for Platinum-Deposited Indium Phosphide Electrodes by the Removal of Surface States." Jpn.J.Appl.Phys.33. 6065-6070 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kobayashi: "Surface states in the band-gap for Pt-deposited p-InP Photoelectrochemical Cells." Appl.Surf.Sci.81. 399-408 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yae: "Preparation of a Langmuir-Blodgett Layer of Ultrafine Platinum Particles and Its Application to n-Si for Efficient Photoelectrochemical Solar Cells." J.Electrochem.Soc.141. 3077-3081 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yae: "Efficient Photoelectrochemical Solar Cells Equipped with an n-Si Electrode Modified with Colloidal Platinum Particles." J.Electrochem.Soc.141. 3090-3095 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakato: "Improvement of Characteristics of New-Type Solar Cells,Having a“Transparent Conductor/Thin SiO_2 Layer with Ultra-fine Metal Particles as Conductive Channels /n-Si"Junction." Sol.Energy Mater.Sol.Cells. (in press). (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ishida: "Structures and Properties of Electron-beam-evaporated Indium Tin Oxide Films as Studied by x-ray Photoelectron Spectroscopy and Work-function Measurements." J.Appl.Phys.73. 4344-4350 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kobayashi: "Increases in Photovoltage of “Indium Tin Oxide/Silicon Oxide/Mat-textured n-Silicon"Junction Solar Cells by Silicon Preoxidation and Annealing Processes." J.Appl.Phys.74. 4756-4761 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ishida: "Dependence of Photovoltages of Spray-deposited Indium Tin Oxide/Silicon Oxide/Silicon Junction Solar Cells on Spray Solvents." J.Electrochem.Soc.141. 1357-1361 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kobayashi: "Improvement of n-Si Photoelectrochemical Cells by the Use of Aceton+Methanol Mixtures as Electrolyte Solvents." J.Electroanal.Chem.371. 53-58 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kobayashi: "Zinc Oxide/n-Si Junction Solar Cells Produced by Spray-pyrolysis Method." J.Appl.Phys.(in press). (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Hinogami: "Efficient Photoelectrochemical Reduction of Carbon Dioxide on a p-Type Silicon (p-Si) Electrode Modified with Very Small Copper Particles." Chem.Lett.1725-1728 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kobayashi: "Improvement in Hydrogen Photoevolution Efficiency for Platinum-Deposited Indium Phosphide Electrodes by the Removal of Surface States." Jpn.J.Appl.Phys.33. 6065-6070 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kobayashi: "Surface States in the Band-gap for Pt-Depopsited p-InP Photoelectrochemical Cells." Appl.Surf.Sce.81. 399-408 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yae: "Preparation of a Langmuir-Blodgett Layr of Ultrafine Platinum Particles and its Application to n-Si for Efficient Photoelectrochemical Solar Cells." J.Electrochem.Soc.141(11). 3077-3081 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yae: "Efficient Photoelectrochemical Solar Cells Equipped with an n-Si Electrode Modefied with Colloidal Platinum Particles." J.Electrochem.Soc.141(11). 3090-3095 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakato: "Improvement of Characteristics of New-Type Solar Cells, Having a "Transparent Conductor/Thin SiO_2 Layr with Ultrafine Metal Particles as Conductive Channels /n-Si" Junction." Sol.Energy Mater.Sol.Cells. (in press). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kobayashi: "Structures and Properties of Electron-beam-evaporated Indium Tin Oxide Films as Studied by X-ray Photoelectron Spectroscopy and Work-function Measurements." J.Appl.Phys.73(9). 4344-4350 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kobayashi: "Increases in Photovoltage of "Indium Tin Oxide/Silicon Oxide/Mat-textured n-Silicon" Junction Solar Cells by Silicon Preoxidation and Annealing Processes." J.Appl.Phys.74(7). 4756-4761 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kobayashi: "Dependence of Photovoltage of Spray-deposited Indium Tin Oxide/Sillicon Oxide/Sillicon Junction Solar Cells on Spray Solvents." J.Electrochem.Soc.141(5). 1357-1361 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kobayashi: "Improvement of n-Si Photoelectrochemical Cells by the Use of Aceton + Methanol Mixtures as Electrolyte Solvents." J.Electroanal.Chem.371. 53-58 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kobayashi: "Zink Oside/n-Si Junction Solar Cells Produced by Spray-Pyrolysis Method." J.Appl.Phys.(in press). (1995)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1996-04-15  

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