1995 Fiscal Year Final Research Report Summary
STUDYS OF SEMICONDUCTOR FILMS FOR HIGH EFFICIENCY SOLAR
| Project/Area Number |
05680425
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
エネルギー学一般・原子力学
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| Research Institution | NAGANO NATIONAL COLLEGE OF TECHNOLOGY |
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Principal Investigator |
NAKAZAWA Tatsuo Nagano National College of Technology, Dept. Electronics and computer science, Associate Professor, 電子情報工学科, 助教授 (70126689)
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| Co-Investigator(Kenkyū-buntansha) |
KURANOUCHI Shin-ichi Nagano National College of Technology, Dept. Electrical Eng., Assistant, 電気工学科, 助手 (50225249)
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| Project Period (FY) |
1993 – 1995
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| Keywords | Solar cell / Smiconductor film / One-step deposition / Electrodeposition / CBD / CIS / CIS |
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| Research Abstract |
In this study, we investigated the deposition of two significant semiconductor layr for CIS thin film solar cells, which are CdS buffer layr by chemical bath deposition (CBD) technique and CuIn (Se, S) _2 absorption layr by electrodeposition.
The resullts are summarize as follows.
・CdS film morphology depended on the kinds source salts, such as Cd (CH_3COO) _2, CdSO_4, CdI and CdCl_2.
・Zn/Cd ratio in the CdZnS film can be controlled by controlling the Zn/Cd ration in solution, however, deposition of ZnS film was very difficult from the solution consists of any Zn salts.
・CIS and CuIn (S, Se) _2 (CISS) films were deposited successfully using onestep electrodeposition technique. In order to control the composition ratio in the multinary films, the precipitation in the solution must filtered out before the deposition.
・Chalcopyrite X-ray diffraction peaks were observed for the deposited films after annealing.
・Al/CISS and AI/CdS/CISS junction which consists of vacuum evaporated Al film showed a rectification characteristics.
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