| Co-Investigator(Kenkyū-buntansha) |
ハイランド M.M. オークランド大学, 工学部, 講師
メトソン J.B. オークランド大学, 理学部, 助教授
ダーンレイ P.A. オークランド大学, 工学部, 講師
FENWICK R.C UNIV.OF AUCKLAND,SCHOOL OF ENGINEERING, 工学部, 教授
ファーガソン W.G. オークランド大学, 工学部, 副教授
SHARP R.M UNIV.OF AUCKLAND,SCHOOL OF ENGINEERING, 工学部, 教授
SAKAI Shiro UNIV.OF TOKUSHIMA,FACULTY OF ENGINEERING, 工学部, 教授 (20135411)
MURAKAMI Ri-ichi UNIV.OF TOKUSHIMA,FACULTY OF ENGINEERING, 工学部, 教授 (00112235)
MIZUGUCHI Hiroyuki UNIV.OF TOKUSHIMA,FACULTY OF ENGINEERING, 工学部, 教授 (00035651)
HANABUSA Takao UNIV.OF TOKUSHIMA,FACULTY OF ENGINEERING, 工学部, 教授 (20035637)
NAKABAYASHI Ichiro UNIV.OF TOKUSHIMA,FACULTY OF ENGINEERING, 工学部, 教授 (70035624)
TAKI Toshihiko UNIV.OF TOKUSHIMA,FACULTY OF ENGINEERING, 工学部, 教授 (10035602)
DEARNLEY P.A UNIV.OF AUCKLAND,SCHOOL OF ENGINEERING
FERGUSON W.G UNIV.OF AUCKLAND,SCHOOL OF ENGINEERING
METSON J.B UNIV.OF AUCKLAND,SCHOOL OF SCIENCE
HYLAND M.M UNIV.OF AUCKLAND,SCHOOL OF ENGINEERING
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| Research Abstract |
The present cooperative research project between the University of Tokushima and the University of Auckland was carried out for 3 years from 1994 to 1996. The title of project is "Development and evaluation of functional materials". The obtained results are as follows.
1) Diamond thin films were deposited on metal surface by using microwave plasma CVD method. It was clear that the diamond thin film and diamond like carbon film had superior mechanical properties. Before diamond deposition, amorphous carbon film was formed. If the amorphous carbon film was removed, it was easy to produce the pure diamond film.
2) High strength concrete was developed. Slump of the high volume fly ash concrete increased with the increment of fly ash volume when the unit water content was constant. The fly ash concrete which has good compresive properties was developed by controlling an interface between fly ash and concrete.
3) It was possible to develop a fuel battery cell material which shows high perfomance.
4) It succeeded to be done epitaxial growth GaAs on GaAs by using MOCVD.It was firstly observed optical radiation from GaAs Also, GaAS-Si type IC was developed by depositing GaAs on Si semiconductor.
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