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1996 Fiscal Year Final Research Report Summary

Mesoscopic Devices Using InAs Heterostructures and Their Applications

Research Project

Project/Area Number 06452223
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHokkaido University

Principal Investigator

YOH Kanji  Hokkaido University, Research Center for Interface Quantum Electronics, Professor, 量子界面エレクトロニクス研究センター, 教授 (60220539)

Co-Investigator(Kenkyū-buntansha) SAITOH Toshiya  Hokkaido University, Research Center for Interface Quantum Electronics, Associat, 量子界面エレクトロニクス研究センター, 助教授 (70241396)
Project Period (FY) 1994 – 1996
KeywordsIndium Arsenide / mesoscopic device / quantum well / quantum wire / quantum dot / charging effect / quantized conductance
Research Abstract

With the advent of microelectronics, the device size and its physical phenomena have reached to the mesoscopic region. There have been strong effort on mesoscopic physics and device applications mostly based on GaAs operated at cryogenic temperatures. We have investigated mesoscopic devices based on InAs heterostructures in order to realize quantum effect devices operated at higher temperatures. First of all, we have investigated fabrication method of quantunm dot structures for the purpose of device applications. Strained InAs heterostructure was shown to inherit inhomogeneous strain distribution which strongly affects its energyband inhomogeniety. Self-assembled InAs dots were shown to distribute regularly on patterned GaAs substrates. Secondly, we have succeeded in fabricating split-gate HEMT structure with InAs dots and observed single electron charging of the dot at up to 40K.We have also succeeded in fabricating InAs wuantum wires and observed quantized conductance at 80K.Thirdly, high performance InAs channel FETs have been fabricated by Platinum gate structure and P' gate structure based on InP.We have successfully applied InAs channel FET structure to superconducting weak links and obtaind IcRn product of 2meV.Finally, InAs heterostructures were also applied to resonat tunneling structures : energy spectra of ballistic electrons were measued by using InAs/AlSb RTD and up to seven phonon replicas were observed at 77K.RTD with InAs well and InGaAs pre-well has been shown to have almost doubled peak current. GaAs/AlGaAs RTD with InAs dots buried in cathode GaAs adjacent to the barrier has been shown to have memory effect due to the charging of InAs dots and charged electrons were shown to be dischraged by resonant tunneling. The clear hysteresis were observed at room temperature.

  • Research Products

    (34 results)

All Other

All Publications (34 results)

  • [Publications] K.Yoh: "Electron and Thermal Transport in InAs Single-Crystal Free-Standing Wires" Semicond. Sci. Technol. vol.9,. 967-969 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Inoue: "Quantized Conductance Observed at High Temperatures in InAs/ (AlGa) Sb Quantum Wells," Semicond. Sci. Technol. vol.9,. 967-969 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji.Yoh: "Quantized Conductance and Its Effects on Non-linear Current Voltage Characteristics at 80K in Mesa-Etched InAs/AlGaSb Quantum Wires with Split-Gate," Solid State Electronics. 37. 555-558 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Maemoto: "Fabrication and Characterization of Superconducting Weak-Links with InAs/ (AlGa) Sb Heterostructure," "Electronics and Communications in Japan,Pergamon Press,). vol.77. 57-65 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yoh: "Current oscillantions with an InAs/AlSb resonant-tunncling diode measured at 77K" Extended Abstracts of the 1994 International Conference on Solid-State Devices and Materials. 443-445 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yoh: "InAs Field-effect transistors with platinum Schottky gate" Extended Abstracts of the 1994 International conference on Solid-State Devices and Materials. 787-789 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Maemoto: "Fabrication of Superconducting Transistors using InAs/ (AlGa) Sb Quantum Wells" Jpn. J. Appl. Phys.33. 7204-7209 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yoh: "OBSERVATION OF MULTOIPLE CURRENT PEAKS OF HOT ELECTRONS BY EMISSION OF MULTIPLE-PHONONS IN InAs/AlSb RESONANT TUNNELING HETEROSTRUCTURES" The Physics of Semiconductors,. vol.2. 1095-1098 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yoh: "Optimized InAs quantum effect device structures grown by molecular beam epitaxy," J. Crystal Growth,. 150. 364-369 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Improvements of Drain Current characteristics of InAs Field-Effect Transistors by the Surface Reaction of Platinum Gate" Solid-State Electronics. vol.38. 1611-1614 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 中川隆之: "カソードウェル構造を有するInP系共鳴トンネルダイオード" 電子情報通信学会技術報告. ED95-113. 81-88 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Saitoh: "Optical Characterization of InAs Quantum Dot Fabricated by Molecular Beam Epitaxy" Jpn. J. Appl. Phys.vol.35. 1217-1220 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Saitoh: "Regular Array Formation of InAs Quantum Dots Grown on Patterned (111) B GaAs Substrate by MBE" Jpn. J. Appl. Phys.vol.35. 1370-1374 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji.Yoh: "Anomalous blue-shift in Photoluminescence from Strained InAs Quantum Dots Fabricated by MBE" Hot Carriers in Semiconductors,. 331-333 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nakano: "A Novel Bistable Double-Barrier Resonat Tunnel Diode by Charging Effect of InAs Dots" Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials. 752-754 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Koizumi: "Fabrication of p+-Gate InAs-Channel HEMT Based on InP" Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials. 746-748 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 谷村 新: "GaAs加工基板を用いた自然形成InAsドットの作製とそのデバイス応用" 電子情報通信学会技術研究報告. 96. 39-46 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yoh: "Electron and Thermal Transport in InAs Single-Crystal Free-Standing Wires" Semicond.Sci.Technol.vol.9. 961-965 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Inoue: "Quantized Conductance Observed at High Temperatures in InAs/ (AlGs) Sb Quantum Wells" Semicond.Sci.Technol.vol.9. 967-969 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh: "Quantized Conductance and Its Effects on Non-linear Current Voltage Characteristics at 80K in Mesa-Etched InAs/AlGaSb Quantum Wires with Split-Gate" Solid State Electronics. 37. 555-558 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Maemoto: "Fabrication and Characterization of Superconducting Weak-Links with InAs/ (AlGa) Sb Heterostructure" Electronics and Communications in Japan, Pergamon Press. vol.77. 57-65 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yoh: "Current oscillations with an InAs/AlSb resonant-tunneling diode measured at 77K" Extended Abstracts of the 1994 International Conference on Solid-State Devices and Materials. 443-445 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yoh: "InAs Field-effect transistors with platinum Schottky gate" Extended Abstracts of the 1994 International Conference on Solid-State Devices and Materials. 787-789 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Maemoto: "Fabrication of Superconducting Transistors using InAs/ (AlGa) Sb Quantum Wells" Jpn.J.Appl.Phys.33. 7204-7209 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yoh: "OBSERVATION OF MULTOLPLE CURRENT PEAKS OF HOT ELECTRONS BY EMISSION OF MULTIPLE-PHONONS IN InAs/AlSb RESONANT TUNNELING HETEROSTRUCTURES" The Physics of Semiconductors, World Scientific Publishing Co.Pte.Ltd.Vol.2. 1095-1098 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yoh: "Optimized InAs quantum effect device structures grown by molecular beam epitaxy" J.Crystal Growth. 150. 364-369 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh: "Improvements of Drain Current Characteristics of InAs Field-Effect Transistors by the Surface Reaction of Platinum Gate" Solid-State Electronics. Vol.38, No.9. 1611-1614 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nakagawa: "Resonant Tunnel Diode Based on InP with a Cathode Well (in Japanese)" Technical Report of IEICE,Electron Devices. (ED95-113). 81-88 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saitoh: "Optical Characterization of InAs Quantum Dot Fabricated by Molecular Beam Epitaxy" Jpn.J.Appl.Phys.Vol.35. 1217-1220 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saitoh: "Regular Array Formation on InAs Quantum Dots Grown on Patterned (111) B GaAs Substrate by MBE" Jpn.J.Appl.Phys.Vol.35. 1370-1374 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nakano: "A Novel Bistable Double-Barrier Resonat Tunnel Diode by Charging Effect of InAs Dots" Extended Abstracts of the 1996 International Conferenceon Solid State Devices and Materials (Yokahama, Aug.26-29,1996). 752-754

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Koizumi: "Fabrication of p^+-Gate InAs-Channel HEMT Based on InP" Extended Abstracts of the 1996 International Conferenceon Solid State Devices and Materials (Yokahama, Aug.26-29,1996). 746-748

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Tanimura: "Fabrication fo Self-assembled InAs Dots Grown on Pattemed GaAs Substrates (in Japanese)" Technical Report of IEICE,Electron Devices. 96 (352). 39-46 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh: Anomalous blue-shift in Photoluminescence from Stained InAs Quantum Dots Fabricated by MBE,Hot Carriers in Semiconductors, K.Hess et al.Eds.Plenum Press, New York, 331-333 (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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