1995 Fiscal Year Annual Research Report

青色半導体レーザー作製のための複合光励起有機金属気相成長技術の開発研究

Research Project

Project/Area Number	07555411
Research Category	Grant-in-Aid for Developmental Scientific Research (B)
Research Institution	Chiba University
Principal Investigator	吉川明彦千葉大学, 工学部, 教授 (20016603)
Co-Investigator(Kenkyū-buntansha)	北村昌良新日本無線(株), ATセンター, 所長小林正和千葉大学, 工学部, 助教授 (10241936)
Keywords	化合物半導体 / II-VI族化合物 / ZnSe / 光プローブ / MOVPE / 青色発光デバイス / 表面光干渉法 / 反射率差法
Research Abstract	本研究ではワイドギャップII-VI族化合物のMOVPEにおいて、アルゴンイオンレーザとヘリウムネオンレーザを用いた複合光励起・プローブ成長系を作製し、成膜過程および光励起効果のその場観察によって、成膜過程および不純物の取り込み機構について検討し、有効な知見を得た。なお、光プローブ法としては表面光干渉法(SPI)および反射率差法(RD)の両方についてその特徴を生かして検討を行った、まず、ZnSeのMOVPE成長系で初めて反射率差(RD)信号の測定に成功し、以下のことを明らかにした。(1)Zn原料の分解過程に応じて2つの安定なZn終端表面状態があること。(2)Se原料種は比較的に長い寿命で未分解の状態で表面に吸着し、Zn原料種の供給に応じて成膜反応が起こること。(3)p型ドーパントである窒素原料種は上述の2つのZn終端には吸着するが、Se終端面には吸着しにくい、つまり-選択吸着性がありP型ド-ピング効率の改善にはZn面上に選択的にドーパント供給することが好ましいこと。(4)さらに、光照射はZn原料の分解過程に影響すること。次に、筆者らが開発した表面光干渉法(SPI)による解析で以下のことを明らかにした。(1)種々の原料に対するSPI信号変化の時定数の温度依存性を解析し、ZnCdのSe化合物では基板表面での成膜反応過程が、前者ではII族原料供給時であるが後者ではVI族供給時となるように、全く逆になること。(2)紫外線から近赤外までの分光SPI信号について、シュミレーションおよびMOMBEとMBEでの実験結果の比較から、760nm付近においてSPI信号が大きく変化し、これがSe原料種の吸着状態に依存していること。このようにII-VI族化合物半導体のMOVPE成長において、光励起および光プローブが成膜プロセスの制御とリアルタイムの解析・評価手段として有効であることを示し、II-VI族化合物の成膜・伝導性制御についての有効な知見を得た。

Research Products
(10 results)

All Other

All Publications (10 results)

[Publications] T.Yoshida,et al: "Reduction of p-ZnTe/p-ZnSe Valence Band Discontinuity by a Ga2Se3 Interfacial Layer" J. Crystal Growth. (掲載予定). (1996)
[Publications] M.Miyachi,et al: "Real Time Monitoring of Growth and p-type Doping Processes in Ar Ion Laser-assisted MOVPE of ZnSe" J.Crystal Growth. (掲載予定). (1996)
[Publications] S.Komatsu,et al: "In-Situ Probing of the ZnSe MOMBE Growth Process by Surface Photo-Interference Method and Spectroscopic Surface Photo-Interference Method" Proceedings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 437-440 (1996)
[Publications] A.W.Jia,et al: "MBE Growth and Characterization of Pseudo-Te rnary and Quaternary Alloys by Superlattices Consisting of (Zn, Cd)(S, Se)Binary II-VI Compounds" Proceedings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 344-347 (1996)
[Publications] Y.Nakamura,et al: "In-Situ Probing of the ZnSe MOMBE Growth Process by Surface Photo-Interference Method and Spectroscopic Surface Photo-Interference Method" Proceedlings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 313-314 (1996)
[Publications] T.Yoshida,et al: "Improved Contacts to p-type ZnSe Using a Zn Te/Ga2Se3 Contact Layer and Related p-n Junction Diode Structures" Proceedings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 461-464 (1996)
[Publications] T.Yoshida,et al: "Formation of A Thin III-VI Compound Interfacial Layer at ZnTe/ZnSe Heterojunction and Its Effect on Energy Band Discontinuity" Journal of Electronic Materials. 25. 183-186 (1996)
[Publications] Y.Nakamura,et al: "A New In-Situ Probing Method with an Atomi c Scale Resolution for Thin Film Depositiom: Surface Photo-Interference(SPI)" Proceedings of 1995 Japan Internatinal Electronic Manufac-turing Technology Symposium. 387-390 (1995)
[Publications] A.W.Jia,et al: "Design and Fabrication of Pseudo-Quaternary ZnCdSSe Mixed Layers by Strained Layer Superlattices" Journal of Electronic Materials. 24. 117-121 (1995)
[Publications] A.Yoshikawa,et al: "Growth Kinetics in MOMBE-ALE of ZnSe and CdSe as Determined by a New In-Situ Optical Probing Method" Phys. Stat. Soli.(b). 187. 315-325 (1995)

1995 Fiscal Year Annual Research Report

青色半導体レーザー作製のための複合光励起有機金属気相成長技術の開発研究

Principal Investigator

吉川 明彦 千葉大学, 工学部, 教授 (20016603)

Research Products

[Publications] T.Yoshida,et al: "Reduction of p-ZnTe/p-ZnSe Valence Band Discontinuity by a Ga2Se3 Interfacial Layer" J. Crystal Growth. (掲載予定). (1996)

[Publications] M.Miyachi,et al: "Real Time Monitoring of Growth and p-type Doping Processes in Ar Ion Laser-assisted MOVPE of ZnSe" J.Crystal Growth. (掲載予定). (1996)

[Publications] S.Komatsu,et al: "In-Situ Probing of the ZnSe MOMBE Growth Process by Surface Photo-Interference Method and Spectroscopic Surface Photo-Interference Method" Proceedings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 437-440 (1996)

[Publications] A.W.Jia,et al: "MBE Growth and Characterization of Pseudo-Te rnary and Quaternary Alloys by Superlattices Consisting of (Zn, Cd)(S, Se)Binary II-VI Compounds" Proceedings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 344-347 (1996)

[Publications] Y.Nakamura,et al: "In-Situ Probing of the ZnSe MOMBE Growth Process by Surface Photo-Interference Method and Spectroscopic Surface Photo-Interference Method" Proceedlings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 313-314 (1996)

[Publications] T.Yoshida,et al: "Improved Contacts to p-type ZnSe Using a Zn Te/Ga2Se3 Contact Layer and Related p-n Junction Diode Structures" Proceedings of Internatinal Symposium on Blue Laser and Light Emitting Diodes. 461-464 (1996)

[Publications] T.Yoshida,et al: "Formation of A Thin III-VI Compound Interfacial Layer at ZnTe/ZnSe Heterojunction and Its Effect on Energy Band Discontinuity" Journal of Electronic Materials. 25. 183-186 (1996)

[Publications] Y.Nakamura,et al: "A New In-Situ Probing Method with an Atomi c Scale Resolution for Thin Film Depositiom: Surface Photo-Interference(SPI)" Proceedings of 1995 Japan Internatinal Electronic Manufac-turing Technology Symposium. 387-390 (1995)

[Publications] A.W.Jia,et al: "Design and Fabrication of Pseudo-Quaternary ZnCdSSe Mixed Layers by Strained Layer Superlattices" Journal of Electronic Materials. 24. 117-121 (1995)

[Publications] A.Yoshikawa,et al: "Growth Kinetics in MOMBE-ALE of ZnSe and CdSe as Determined by a New In-Situ Optical Probing Method" Phys. Stat. Soli.(b). 187. 315-325 (1995)

吉川明彦千葉大学, 工学部, 教授 (20016603)